| 12482747 |
Local interconnects having different material compositions |
Cho-Chuan Yang, Daniel C. Edelstein, Jon Slaughter |
2025-11-25 |
|
| 12464731 |
Layered bottom electrode dielectric for embedded MRAM |
Ashim Dutta, Michael Rizzolo, Jon Slaughter, Cho-Chuan Yang |
2025-11-04 |
|
| 12453297 |
Recessed local interconnect semiconductor memory device |
Cho-Chuan Yang, Daniel C. Edelstein |
2025-10-21 |
|
| 12376369 |
FinFET devices |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2025-07-29 |
|
| 12277960 |
Modified top electrode contact for MRAM embedding in advanced logic nodes |
Ashim Dutta, Dominik Metzler, Oscar van der Straten |
2025-04-15 |
|
| 12033892 |
Structure and method to improve FAV RIE process margin and electromigration |
Benjamin D. Briggs, Joe Lee |
2024-07-09 |
$11,082,000 |
| 11955152 |
Dielectric fill for tight pitch MRAM pillar array |
Ashim Dutta, Chih-Chao Yang, Daniel C. Edelstein |
2024-04-09 |
$10,928,000 |
| 11937514 |
High-density memory devices using oxide gap fill |
Daniel C. Edelstein, Chih-Chao Yang |
2024-03-19 |
$12,891,000 |
| 11869783 |
Optimizating semiconductor binning by feed-forward process adjustment |
Benjamin D. Briggs, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Michael Rizzolo, James H. Stathis |
2024-01-09 |
$9,963,000 |
| 11837501 |
Selective recessing to form a fully aligned via |
Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Joe Lee |
2023-12-05 |
$9,771,000 |
| 11812668 |
Pillar-based memory hardmask smoothing and stress reduction |
Michael Rizzolo, Ashim Dutta, Dominik Metzler |
2023-11-07 |
$6,695,000 |
| 11710658 |
Structure and method to improve FAV RIE process margin and Electromigration |
Benjamin D. Briggs, Joe Lee |
2023-07-25 |
$13,062,000 |
| 11664271 |
Dual damascene with short liner |
Koichi Motoyama, Oscar van der Straten, Joseph F. Maniscalco, Alexander Reznicek, Raghuveer R. Patlolla |
2023-05-30 |
$4,328,000 |
| 11615988 |
FinFET devices |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2023-03-28 |
$8,727,000 |
| 11600325 |
Non volatile resistive memory logic device |
Hsueh-Chung Chen, Mary Claire Silvestre, Soon-Cheon Seo, Chi-Chun Liu, Fee Li Lie +2 more |
2023-03-07 |
$13,230,000 |
| 11569442 |
Dielectric retention and method of forming memory pillar |
Saba Zare, Michael Rizzolo, Mona A. Ebrish |
2023-01-31 |
$7,725,000 |
| 11502242 |
Embedded memory devices |
Ashim Dutta, Chih-Chao Yang, Michael Rizzolo |
2022-11-15 |
$5,426,000 |
| 11462583 |
Embedding magneto-resistive random-access memory devices between metal levels |
Ashim Dutta, Chih-Chao Yang, Daniel C. Edelstein, John C. Arnold |
2022-10-04 |
$9,590,000 |
| 11302630 |
Electrode-via structure |
Chih-Chao Yang, Daniel C. Edelstein |
2022-04-12 |
$4,292,000 |
| 11257717 |
Selective recessing to form a fully aligned via |
Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Joe Lee |
2022-02-22 |
$10,859,000 |
| 11244907 |
Metal surface preparation for increased alignment contrast |
Tianji Zhou, Saumya Sharma, Dominik Metzler, Chih-Chao Yang |
2022-02-08 |
$4,353,000 |
| 11239278 |
Bottom conductive structure with a limited top contact area |
Chih-Chao Yang, Baozhen Li, Koichi Motoyama |
2022-02-01 |
$4,586,000 |
| 11239421 |
Embedded BEOL memory device with top electrode pillar |
Dexin Kong, Soon-Cheon Seo, Shyng-Tsong Chen, Youngseok Kim |
2022-02-01 |
$4,586,000 |
| 11223008 |
Pillar-based memory hardmask smoothing and stress reduction |
Michael Rizzolo, Ashim Dutta, Dominik Metzler |
2022-01-11 |
$4,843,000 |
| 11217742 |
Bottom electrode for semiconductor memory device |
Chih-Chao Yang, Daniel C. Edelstein |
2022-01-04 |
$22,913,000 |
