Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
JL

Joe Lee — 35 Patents

IBM: 25 patents #4,231 of 70,183Top 7%
TETessera: 8 patents #54 of 271Top 20%
SSStmicroelectronics Sa: 5 patents #1,281 of 1,676Top 80%
TLTokyo Electron Limited: 4 patents #1,723 of 5,567Top 35%
ZEZeon: 2 patents #301 of 734Top 45%
ASAdeia Semiconductor Solutions: 1 patents #22 of 57Top 40%
Niskayuna, NY: #106 of 949 inventorsTop 15%
New York: #3,243 of 115,490 inventorsTop 3%
Overall (All Time): #96,288 of 4,157,543Top 3%
35 Patents All Time
Joe Lee has been granted 35 US patents while listed as an inventor at IBM. The first was granted in 2016 and the most recent in August 2025. Joe Lee ranks #96,288 of 4,157,543 US inventors in our database (top 2.3%). Patent records list Joe Lee in Niskayuna, NY, US.

Patents per Year

Patents granted per year, 2016 to 2025Bar chart with a peak of 7 patents in 2018.peak 72016: 5 patents20162017: 1 patents20172018: 7 patents20182019: 5 patents20192020: 5 patents20202021: 4 patents20212022: 1 patents20222023: 3 patents20232024: 2 patents20242025: 2 patents2025

Issued Patents All Time

Showing 1–25 of 35 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
12400859 Metal hard mask for precise tuning of mandrels Yann Mignot, Christopher J. Penny, Koichi Motoyama 2025-08-26
12266607 Bottom barrier free interconnects without voids Kenneth Chun Kuen Cheng, Koichi Motoyama, Kisik Choi, Cornelius Brown Peethala, Hosadurga Shobha 2025-04-01
12183634 Selective recessing to form a fully aligned via Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Thedorus E. Standaert 2024-12-31
12033892 Structure and method to improve FAV RIE process margin and electromigration Benjamin D. Briggs, Theodorus E. Standaert 2024-07-09 $11,082,000
11837501 Selective recessing to form a fully aligned via Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Theodorus E. Standaert 2023-12-05 $9,771,000
11721578 Split ash processes for via formation to suppress damage to low-K layers Yen-Tien Lu, Angelique Raley 2023-08-08
11710658 Structure and method to improve FAV RIE process margin and Electromigration Benjamin D. Briggs, Theodorus E. Standaert 2023-07-25 $13,062,000
11257717 Selective recessing to form a fully aligned via Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Theodorus E. Standaert 2022-02-22 $10,859,000
11164815 Bottom barrier free interconnects without voids Kenneth Chun Kuen Cheng, Koichi Motoyama, Kisik Choi, Cornelius Brown Peethala, Hosadurga Shobha 2021-11-02 $2,126,000
11037822 Svia using a single damascene interconnect Yann Mignot, Muthumanickam Sankarapandian, Yongan Xu 2021-06-15 $4,393,000
10985056 Structure and method to improve FAV RIE process margin and Electromigration Benjamin D. Briggs, Theodorus E. Standaert 2021-04-20 $24,642,000
10957584 Structure and method to improve FAV RIE process margin and electromigration Benjamin D. Briggs, Theodorus E. Standaert 2021-03-23 $27,105,000
10832952 Selective recessing to form a fully aligned via Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Theodorus E. Standaert 2020-11-10 $12,559,000
10672705 Method of forming a straight via profile with precise critical dimension control Yongan Xu, Junli Wang, Yann Mignot 2020-06-02 $2,290,000
10643859 Hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication Robert L. Bruce, Eric A. Joseph, Takefumi Suzuki 2020-05-05 $3,712,000
10636706 Selective recessing to form a fully aligned via Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Theodorus E. Standaert 2020-04-28 $8,182,000
10622301 Method of forming a straight via profile with precise critical dimension control Yongan Xu, Junli Wang, Yann Mignot 2020-04-14 $1,668,000
10347825 Selective deposition and nitridization of bottom electrode metal for MRAM applications Benjamin D. Briggs, Christopher J. Penny, Michael Rizzolo, Chih-Chao Yang 2019-07-09 $2,201,000
10312434 Selective deposition and nitridization of bottom electrode metal for MRAM applications Benjamin D. Briggs, Christopher J. Penny, Michael Rizzolo, Chih-Chao Yang 2019-06-04 $2,774,000
10276436 Selective recessing to form a fully aligned via Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Theodorus E. Standaert 2019-04-30 $3,198,000
10211138 Metal silicate spacers for fully aligned vias Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang 2019-02-19 $3,019,000
10170416 Selective blocking boundary placement for circuit locations requiring electromigration short-length Benjamin D. Briggs, Elbert E. Huang, Christopher J. Penny 2019-01-01
10121676 Interconnects fabricated by hydrofluorocarbon gas-assisted plasma etch Robert L. Bruce, Eric A. Joseph, Takefumi Suzuki 2018-11-06 $3,429,000
10049974 Metal silicate spacers for fully aligned vias Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang 2018-08-14 $4,051,000
10020254 Integration of super via structure in BEOL Ruqiang Bao, Yann Mignot, Hosadurga Shobha, Junli Wang, Yongan Xu 2018-07-10 $4,870,000