Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Structure and method to improve FAV RIE process margin and electromigration

Structure and method to improve FAV RIE process margin and electromigration

US Patent 12033892 · Granted Jul 9, 2024

Estimated economic value: $11,082,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-forming barrier for use in air gap formation2025
Local interconnects having different material compositions2025
Layered bottom electrode dielectric for embedded MRAM2025
Recessed local interconnect semiconductor memory device2025
Metal hard mask for precise tuning of mandrels2025
FinFET devices2025
Modified top electrode contact for MRAM embedding in advanced logic nodes2025
Bottom barrier free interconnects without voids2025
Selective ILD deposition for fully aligned via with airgap2025
Selective recessing to form a fully aligned via2024
Selective recessing to form a fully aligned via2024
Semiconductor interconnect structure with double conductors2024