Issued Patents All Time
Showing 1–25 of 77 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12107008 | Maskless alignment scheme for BEOL memory array manufacturing | Soon-Cheon Seo, Dexin Kong, Raghuveer R. Patlolla | 2024-10-01 |
| 12046680 | Inner spacer formation for nanosheet transistors | Yi Song, Chi-Chun Liu, Robin Hsin Kuo Chao | 2024-07-23 |
| 11980111 | Confined bridge cell phase change memory | Injo Ok, Andrew H. Simon, Kevin W. Brew, Steven Michael McDermott, Nicole Saulnier | 2024-05-07 |
| 11930724 | Phase change memory cell spacer | Injo Ok, Nicole Saulnier, Andrew H. Simon, Steven Michael McDermott, Iqbal Rashid Saraf | 2024-03-12 |
| 11784120 | Metal via structure | Yann Mignot, James J. Kelly, Yongan Xu, Hsueh-Chung Chen, Daniel J. Vincent | 2023-10-10 |
| 11515431 | Enabling residue free gap fill between nanosheets | Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Ruqiang Bao, Nelson Felix | 2022-11-29 |
| 11456415 | Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner | Injo Ok, Ruqiang Bao, Andrew H. Simon, Kevin W. Brew, Nicole Saulnier +2 more | 2022-09-27 |
| 11302797 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan, Sanjay C. Mehta | 2022-04-12 |
| 11264569 | Phase change memory device | Injo Ok, Kevin W. Brew, Timothy Mathew Philip, Sanjay C. Mehta, Nicole Saulnier +1 more | 2022-03-01 |
| 11171051 | Contacts and liners having multi-segmented protective caps | Jennifer Fullam, Su Chen Fan, Christopher J. Waskiewicz | 2021-11-09 |
| 11152298 | Metal via structure | Yann Mignot, James J. Kelly, Yongan Xu, Hsueh-Chung Chen, Daniel J. Vincent | 2021-10-19 |
| 11133308 | Uniform work function metal recess for vertical transistor complementary metal oxide semiconductor technology | Ruilong Xie, Chanro Park, Kangguo Cheng | 2021-09-28 |
| 11075280 | Self-aligned gate and junction for VTFET | Zuoguang Liu, Kangguo Cheng, Oleg Gluschenkov | 2021-07-27 |
| 11037822 | Svia using a single damascene interconnect | Yann Mignot, Yongan Xu, Joe Lee | 2021-06-15 |
| 10957536 | Removal of trilayer resist without damage to underlying structure | Soon-Cheon Seo, Indira Seshadri, John R. Sporre | 2021-03-23 |
| 10943992 | Transistor having straight bottom spacers | Kangguo Cheng, Christopher J. Waskiewicz, Michael P. Belyansky, Brent A. Anderson, Puneet Harischandra Suvarna +1 more | 2021-03-09 |
| 10937789 | Nanosheet eDRAM | Alexander Reznicek, Donald F. Canaperi, Keith E. Fogel | 2021-03-02 |
| 10896816 | Silicon residue removal in nanosheet transistors | Zhenxing Bi, Thamarai S. Devarajan, Nicolas Loubet, Binglin Miao, Charan V. Surisetty +2 more | 2021-01-19 |
| 10886197 | Controlling via critical dimension with a titanium nitride hard mask | Yann Mignot, Yongan Xu | 2021-01-05 |
| 10840354 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan, Sanjay C. Mehta | 2020-11-17 |
| 10825720 | Single trench damascene interconnect using TiN HMO | Yann Mignot, Yongan Xu | 2020-11-03 |
| 10755963 | Crossbar reinforced semiconductor fins having reduced wiggling | Kangguo Cheng, Chi-Chun Liu, Yann Mignot | 2020-08-25 |
| 10734245 | Highly selective dry etch process for vertical FET STI recess | Zhenxing Bi, Richard A. Conti, Michael P. Belyansky | 2020-08-04 |
| 10707132 | Method to recess cobalt for gate metal application | Georges Jacobi, Vimal Kamineni, Randolph F. Knarr, Balasubramanian Pranatharthiharan | 2020-07-07 |
| 10707326 | Vertical field-effect-transistors having a silicon oxide layer with controlled thickness | Chi-Chun Liu, Sanjay C. Mehta, Luciana Meli, Kristin Schmidt, Ankit Vora | 2020-07-07 |