Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12148699 | High aspect ratio buried power rail metallization | Sagarika Mukesh, Devika Sarkar Grant, Fee Li Lie, Hosadurga Shobha, Aakrati Jain | 2024-11-19 |
| 11302797 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian | 2022-04-12 |
| 10896816 | Silicon residue removal in nanosheet transistors | Zhenxing Bi, Nicolas Loubet, Binglin Miao, Muthumanickam Sankarapandian, Charan V. Surisetty +2 more | 2021-01-19 |
| 10840354 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian | 2020-11-17 |
| 10629702 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Zhenxing Bi, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian | 2020-04-21 |
| 10388571 | Fin type field effect transistors with different pitches and substantially uniform fin reveal | Zhenxing Bi, Kangguo Cheng, Balasubramanian Pranatharthiharan | 2019-08-20 |
| 10366928 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2019-07-30 |
| 10355109 | Spacer formation on semiconductor device | Sanjay C. Mehta, Eric R. Miller, Soon-Cheon Seo | 2019-07-16 |
| 10242882 | Cyclic etch process to remove dummy gate oxide layer for fin field effect transistor fabrication | Zhenxing Bi, Donald F. Canaperi, Sean Teehan | 2019-03-26 |
| 10163721 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2018-12-25 |
| 10020229 | Fin type field effect transistors with different pitches and substantially uniform fin reveal | Zhenxing Bi, Kangguo Cheng, Balasubramanian Pranatharthiharan | 2018-07-10 |
| 9997352 | Polysilicon residue removal in nanosheet MOSFETs | Zhenxing Bi, Donald F. Canaperi, Nicolas Loubet | 2018-06-12 |
| 9935015 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2018-04-03 |
| 9911831 | Spacer formation on semiconductor device | Sanjay C. Mehta, Eric R. Miller, Soon-Cheon Seo | 2018-03-06 |
| 9754798 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Zhenxing Bi, Donald F. Canaperi, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2017-09-05 |
| 9691765 | Fin type field effect transistors with different pitches and substantially uniform fin reveal | Zhenxing Bi, Kangguo Cheng, Balasubramanian Pranatharthiharan | 2017-06-27 |
| 9679780 | Polysilicon residue removal in nanosheet MOSFETs | Zhenxing Bi, Donald F. Canaperi, Nicolas Loubet | 2017-06-13 |
| 9443855 | Spacer formation on semiconductor device | Sanjay C. Mehta, Eric R. Miller, Soon-Cheon Seo | 2016-09-13 |