| 12494408 |
Double patterned microcooler having alternating fin widths |
Fee Li Lie, Sagarika Mukesh, Devika Sarkar Grant, Hosadurga Shobha, Kamal K. Sikka |
2025-12-09 |
|
| 12148699 |
High aspect ratio buried power rail metallization |
Sagarika Mukesh, Devika Sarkar Grant, Fee Li Lie, Hosadurga Shobha, Aakrati Jain |
2024-11-19 |
$17,641,000 |
| 11302797 |
Approach to bottom dielectric isolation for vertical transport fin field effect transistors |
Zhenxing Bi, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian |
2022-04-12 |
$4,292,000 |
| 10896816 |
Silicon residue removal in nanosheet transistors |
Zhenxing Bi, Nicolas Loubet, Binglin Miao, Muthumanickam Sankarapandian, Charan V. Surisetty +2 more |
2021-01-19 |
$4,840,000 |
| 10840354 |
Approach to bottom dielectric isolation for vertical transport fin field effect transistors |
Zhenxing Bi, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian |
2020-11-17 |
$2,639,000 |
| 10629702 |
Approach to bottom dielectric isolation for vertical transport fin field effect transistors |
Zhenxing Bi, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian |
2020-04-21 |
$2,793,000 |
| 10388571 |
Fin type field effect transistors with different pitches and substantially uniform fin reveal |
Zhenxing Bi, Kangguo Cheng, Balasubramanian Pranatharthiharan |
2019-08-20 |
$1,949,000 |
| 10366928 |
Hybridization fin reveal for uniform fin reveal depth across different fin pitches |
Zhenxing Bi, Donald F. Canaperi, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu |
2019-07-30 |
$4,347,000 |
| 10355109 |
Spacer formation on semiconductor device |
Sanjay C. Mehta, Eric R. Miller, Soon-Cheon Seo |
2019-07-16 |
$4,107,000 |
| 10242882 |
Cyclic etch process to remove dummy gate oxide layer for fin field effect transistor fabrication |
Zhenxing Bi, Donald F. Canaperi, Sean Teehan |
2019-03-26 |
$2,148,000 |
| 10163721 |
Hybridization fin reveal for uniform fin reveal depth across different fin pitches |
Zhenxing Bi, Donald F. Canaperi, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu |
2018-12-25 |
|
| 10020229 |
Fin type field effect transistors with different pitches and substantially uniform fin reveal |
Zhenxing Bi, Kangguo Cheng, Balasubramanian Pranatharthiharan |
2018-07-10 |
$4,870,000 |
| 9997352 |
Polysilicon residue removal in nanosheet MOSFETs |
Zhenxing Bi, Donald F. Canaperi, Nicolas Loubet |
2018-06-12 |
$1,886,000 |
| 9935015 |
Hybridization fin reveal for uniform fin reveal depth across different fin pitches |
Zhenxing Bi, Donald F. Canaperi, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu |
2018-04-03 |
$2,801,000 |
| 9911831 |
Spacer formation on semiconductor device |
Sanjay C. Mehta, Eric R. Miller, Soon-Cheon Seo |
2018-03-06 |
$2,330,000 |
| 9754798 |
Hybridization fin reveal for uniform fin reveal depth across different fin pitches |
Zhenxing Bi, Donald F. Canaperi, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu |
2017-09-05 |
$2,785,000 |
| 9691765 |
Fin type field effect transistors with different pitches and substantially uniform fin reveal |
Zhenxing Bi, Kangguo Cheng, Balasubramanian Pranatharthiharan |
2017-06-27 |
$2,603,000 |
| 9679780 |
Polysilicon residue removal in nanosheet MOSFETs |
Zhenxing Bi, Donald F. Canaperi, Nicolas Loubet |
2017-06-13 |
$2,356,000 |
| 9443855 |
Spacer formation on semiconductor device |
Sanjay C. Mehta, Eric R. Miller, Soon-Cheon Seo |
2016-09-13 |
$4,023,000 |
