| 11908890 |
Isolation structure for stacked vertical transistors |
Juntao Li, Kangguo Cheng, Chen Zhang |
2024-02-20 |
$7,691,000 |
| 11798852 |
Hybrid-channel nano-sheet FETs |
Kangguo Cheng, Peng Xu, Wenyu Xu |
2023-10-24 |
$9,361,000 |
| 11744981 |
Internet of things (IoT) real-time response to defined symptoms |
Mahmoud Amin, Krishna R. Tunga, Lawrence A. Clevenger, Leigh Anne H. Clevenger |
2023-09-05 |
$6,576,000 |
| 11682582 |
Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors |
Kangguo Cheng, Juntao Li, Dexin Kong |
2023-06-20 |
$4,843,000 |
| 11682674 |
Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices |
Kangguo Cheng, Juntao Li |
2023-06-20 |
$4,843,000 |
| 11677026 |
Transistor having wrap-around source/drain contacts |
Kangguo Cheng, Juntao Li, Peng Xu |
2023-06-13 |
$5,486,000 |
| 11495688 |
Source and drain epitaxy and isolation for gate structures |
Kangguo Cheng, Juntao Li, Peng Xu |
2022-11-08 |
$10,347,000 |
| 11489044 |
Nanosheet transistor bottom isolation |
Kangguo Cheng, Yi Song, Lijuan Zou |
2022-11-01 |
$6,203,000 |
| 11453911 |
DNA sequencing with stacked nanopores |
Kangguo Cheng, Juntao Li, Xin Miao |
2022-09-27 |
$6,862,000 |
| 11362093 |
Co-integration of non-volatile memory on gate-all-around field effect transistor |
Zheng Xu, Dexin Kong, Kangguo Cheng |
2022-06-14 |
$8,092,000 |
| 11335773 |
Trench contact resistance reduction |
Kangguo Cheng, Juntao Li, Peng Xu |
2022-05-17 |
$6,899,000 |
| 11302797 |
Approach to bottom dielectric isolation for vertical transport fin field effect transistors |
Thamarai S. Devarajan, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian |
2022-04-12 |
$4,292,000 |
| 11302205 |
Language learning and speech enhancement through natural language processing |
Mahmoud Amin, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Christopher J. Penny, Krishna R. Tunga +1 more |
2022-04-12 |
$4,292,000 |
| 11276612 |
Hybrid-channel nano-sheet FETS |
Kangguo Cheng, Peng Xu, Wenyu Xu |
2022-03-15 |
$10,208,000 |
| 11251267 |
Vertical transistors with multiple gate lengths |
Kangguo Cheng, Peng Xu, Zheng Xu |
2022-02-15 |
$5,512,000 |
| 11210968 |
Behavior-based interactive educational sessions |
Lawrence A. Clevenger, Stefania Axo, Leigh Anne H. Clevenger, Krishna R. Tunga, Mahmoud Amin +4 more |
2021-12-28 |
$7,175,000 |
| 11195755 |
Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors |
Kangguo Cheng, Juntao Li, Dexin Kong |
2021-12-07 |
$3,115,000 |
| 11195754 |
Transistor with reduced gate resistance and improved process margin of forming self-aligned contact |
Kangguo Cheng, Juntao Li, Dexin Kong |
2021-12-07 |
$3,115,000 |
| 11185658 |
Internet of things (IOT) real-time response to defined symptoms |
Mahmoud Amin, Krishna R. Tunga, Lawrence A. Clevenger, Leigh Anne H. Clevenger |
2021-11-30 |
$2,996,000 |
| 11164958 |
Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions |
Shogo Mochizuki, Nicolas Loubet, Richard A. Conti |
2021-11-02 |
$2,126,000 |
| 11164959 |
VFET devices with ILD protection |
Kangguo Cheng, Juntao Li, Peng Xu |
2021-11-02 |
$2,126,000 |
| 11158730 |
Formation of inner spacer on nanosheet MOSFET |
Kangguo Cheng, Juntao Li, Peng Xu |
2021-10-26 |
$2,874,000 |
| 11145508 |
Forming a fin cut in a hardmask |
Kangguo Cheng, Juntao Li, Peng Xu |
2021-10-12 |
$3,967,000 |
| 11131919 |
Extreme ultraviolet (EUV) mask stack processing |
Yongan Xu, Yann Mignot, Nelson Felix, Ekmini Anuja De Silva |
2021-09-28 |
$6,479,000 |
| 11121044 |
Vertically stacked nanosheet CMOS transistor |
Kangguo Cheng, Juntao Li |
2021-09-14 |
$2,674,000 |
