Issued Patents All Time
Showing 26–50 of 180 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11081546 | Isolation structure for stacked vertical transistors | Juntao Li, Kangguo Cheng, Chen Zhang | 2021-08-03 |
| 11075200 | Integrated device with vertical field-effect transistors and hybrid channels | Kangguo Cheng, Zheng Xu, Dexin Kong | 2021-07-27 |
| 11056399 | Source and drain EPI protective spacer during single diffusion break formation | Yao Yao, Andrew M. Greene, Veeraraghavan S. Basker, Kangguo Cheng, Ruilong Xie | 2021-07-06 |
| 11043493 | Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices | Kangguo Cheng, Juntao Li | 2021-06-22 |
| 11024711 | Nanosheet FET bottom isolation | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2021-06-01 |
| 11024547 | Method and structure for forming vertical transistors with shared gates and separate gates | Kangguo Cheng, Juntao Li, Peng Xu | 2021-06-01 |
| 11022891 | Photoresist bridging defect removal by reverse tone weak developer | Karen E. Petrillo, Nicole Saulnier, Hao Tang | 2021-06-01 |
| 11022890 | Photoresist bridging defect removal by reverse tone weak developer | Karen E. Petrillo, Nicole Saulnier, Hao Tang | 2021-06-01 |
| 11011622 | Closely packed vertical transistors with reduced contact resistance | Kangguo Cheng, Juntao Li, Peng Xu | 2021-05-18 |
| 11011432 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Kangguo Cheng, Juntao Li, Peng Xu | 2021-05-18 |
| 11004751 | Vertical transistor having reduced edge fin variation | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-05-11 |
| 10998229 | Transistor with improved self-aligned contact | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-05-04 |
| 10985279 | Source and drain epitaxy and isolation for gate structures | Kangguo Cheng, Juntao Li, Peng Xu | 2021-04-20 |
| 10985236 | Tunable on-chip nanosheet resistor | Kangguo Cheng, Wei Wang, Zheng Xu | 2021-04-20 |
| 10978576 | Techniques for vertical FET gate length control | Chi-Chun Liu, Chun Wing Yeung, Robin Hsin Kuo Chao, Kristin Schmidt, Yann Mignot | 2021-04-13 |
| 10957601 | Self-aligned fin recesses in nanosheet field effect transistors | Kangguo Cheng, Wenyu Xu, Xin Miao | 2021-03-23 |
| 10957599 | Integrating extra gate VFET with single gate VFET | Kangguo Cheng, Junli Wang, Peng Xu | 2021-03-23 |
| 10937860 | Nanosheet transistor bottom isolation | Kangguo Cheng, Yi Song, Lijuan Zou | 2021-03-02 |
| 10937792 | Dense vertical field effect transistor structure | Peng Xu, Kangguo Cheng, Juntao Li | 2021-03-02 |
| 10937703 | Field-effect transistor having dual channels | Kangguo Cheng, Juntao Li, Peng Xu | 2021-03-02 |
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Kangguo Cheng, Nicolas Loubet, Xin Miao, Wenyu Xu, Chen Zhang | 2021-02-23 |
| 10930734 | Nanosheet FET bottom isolation | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2021-02-23 |
| 10916154 | Language learning and speech enhancement through natural language processing | Mahmoud Amin, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Christopher J. Penny, Krishna R. Tunga +1 more | 2021-02-09 |
| 10896816 | Silicon residue removal in nanosheet transistors | Thamarai S. Devarajan, Nicolas Loubet, Binglin Miao, Muthumanickam Sankarapandian, Charan V. Surisetty +2 more | 2021-01-19 |
| 10892328 | Source/drain extension regions and air spacers for nanosheet field-effect transistor structures | Yi Song, Kangguo Cheng, Chi-Chun Liu | 2021-01-12 |