Issued Patents All Time
Showing 25 most recent of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11990530 | Replacement-channel fabrication of III-V nanosheet devices | Jingyun Zhang, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu | 2024-05-21 |
| 11842998 | Semiconductor device and method of forming the semiconductor device | Robin Hsin Kuo Chao, Hemanth Jagannathan, Choonghyun Lee, Jingyun Zhang | 2023-12-12 |
| 11742409 | Replacement-channel fabrication of III-V nanosheet devices | Jingyun Zhang, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu | 2023-08-29 |
| 11569347 | Self-aligned two-dimensional material transistors | Chen Zhang, Peng Xu | 2023-01-31 |
| 11164870 | Stacked upper fin and lower fin transistor with separate gate | Heng Wu, Ruilong Xie, Lan Yu | 2021-11-02 |
| 11081567 | Replacement-channel fabrication of III-V nanosheet devices | Jingyun Zhang, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu | 2021-08-03 |
| 11024738 | Measurement of top contact resistance in vertical field-effect transistor devices | Zuoguang Liu, Richard Southwick, Xin Miao | 2021-06-01 |
| 11011643 | Nanosheet FET including encapsulated all-around source/drain contact | Peng Xu, Chen Zhang | 2021-05-18 |
| 10991797 | Self-aligned two-dimensional material transistors | Chen Zhang, Peng Xu | 2021-04-27 |
| 10985273 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Choonghyun Lee, Jingyun Zhang, Robin Hsin Kuo Chao, Heng Wu | 2021-04-20 |
| 10978576 | Techniques for vertical FET gate length control | Chi-Chun Liu, Robin Hsin Kuo Chao, Zhenxing Bi, Kristin Schmidt, Yann Mignot | 2021-04-13 |
| 10957763 | Gate fill utilizing replacement spacer | Chen Zhang | 2021-03-23 |
| 10930567 | Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact | Choonghyun Lee, Shogo Mochizuki, Hemanth Jagannathan | 2021-02-23 |
| 10930793 | Bottom channel isolation in nanosheet transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Jingyun Zhang | 2021-02-23 |
| 10916640 | Approach to high-k dielectric feature uniformity | Tenko Yamashita, Chen Zhang | 2021-02-09 |
| 10896851 | Vertically stacked transistors | Kangguo Cheng, Tenko Yamahita, Chen Zhang | 2021-01-19 |
| 10896816 | Silicon residue removal in nanosheet transistors | Zhenxing Bi, Thamarai S. Devarajan, Nicolas Loubet, Binglin Miao, Muthumanickam Sankarapandian +2 more | 2021-01-19 |
| 10804410 | Bottom channel isolation in nanosheet transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Jingyun Zhang | 2020-10-13 |
| 10763327 | Nanosheet MOSFET with gate fill utilizing replacement spacer | Chen Zhang | 2020-09-01 |
| 10756205 | Double gate two-dimensional material transistor | Peng Xu, Chen Zhang | 2020-08-25 |
| 10741681 | Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly | Chi-Chun Liu, Chen Zhang | 2020-08-11 |
| 10734502 | Prevention of extension narrowing in nanosheet field effect transistors | Tenko Yamashita, Chen Zhang | 2020-08-04 |
| 10700195 | Reduced resistance source and drain extensions in vertical field effect transistors | Peng Xu, Chen Zhang | 2020-06-30 |
| 10658299 | Replacement metal gate processes for vertical transport field-effect transistor | Choonghyun Lee, Ruqiang Bao, Hemanth Jagannathan | 2020-05-19 |
| 10622489 | Vertical tunnel FET with self-aligned heterojunction | Choonghyun Lee, Shogo Mochizuki, Ruqiang Bao | 2020-04-14 |