| 11990530 |
Replacement-channel fabrication of III-V nanosheet devices |
Jingyun Zhang, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu |
2024-05-21 |
$15,464,000 |
| 11842998 |
Semiconductor device and method of forming the semiconductor device |
Robin Hsin Kuo Chao, Hemanth Jagannathan, Choonghyun Lee, Jingyun Zhang |
2023-12-12 |
$10,723,000 |
| 11742409 |
Replacement-channel fabrication of III-V nanosheet devices |
Jingyun Zhang, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu |
2023-08-29 |
$6,011,000 |
| 11569347 |
Self-aligned two-dimensional material transistors |
Chen Zhang, Peng Xu |
2023-01-31 |
$7,725,000 |
| 11164870 |
Stacked upper fin and lower fin transistor with separate gate |
Heng Wu, Ruilong Xie, Lan Yu |
2021-11-02 |
$2,126,000 |
| 11081567 |
Replacement-channel fabrication of III-V nanosheet devices |
Jingyun Zhang, Choonghyun Lee, Robin Hsin Kuo Chao, Heng Wu |
2021-08-03 |
$4,187,000 |
| 11024738 |
Measurement of top contact resistance in vertical field-effect transistor devices |
Zuoguang Liu, Richard Southwick, Xin Miao |
2021-06-01 |
$4,052,000 |
| 11011643 |
Nanosheet FET including encapsulated all-around source/drain contact |
Peng Xu, Chen Zhang |
2021-05-18 |
$4,116,000 |
| 10991797 |
Self-aligned two-dimensional material transistors |
Chen Zhang, Peng Xu |
2021-04-27 |
$8,613,000 |
| 10985273 |
Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile |
Choonghyun Lee, Jingyun Zhang, Robin Hsin Kuo Chao, Heng Wu |
2021-04-20 |
$5,008,000 |
| 10978576 |
Techniques for vertical FET gate length control |
Chi-Chun Liu, Robin Hsin Kuo Chao, Zhenxing Bi, Kristin Schmidt, Yann Mignot |
2021-04-13 |
|
| 10957763 |
Gate fill utilizing replacement spacer |
Chen Zhang |
2021-03-23 |
$2,115,000 |
| 10930567 |
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact |
Choonghyun Lee, Shogo Mochizuki, Hemanth Jagannathan |
2021-02-23 |
$3,028,000 |
| 10930793 |
Bottom channel isolation in nanosheet transistors |
Robin Hsin Kuo Chao, Choonghyun Lee, Jingyun Zhang |
2021-02-23 |
$3,028,000 |
| 10916640 |
Approach to high-k dielectric feature uniformity |
Tenko Yamashita, Chen Zhang |
2021-02-09 |
$3,536,000 |
| 10896851 |
Vertically stacked transistors |
Kangguo Cheng, Tenko Yamahita, Chen Zhang |
2021-01-19 |
$4,840,000 |
| 10896816 |
Silicon residue removal in nanosheet transistors |
Zhenxing Bi, Thamarai S. Devarajan, Nicolas Loubet, Binglin Miao, Muthumanickam Sankarapandian +2 more |
2021-01-19 |
$4,840,000 |
| 10804410 |
Bottom channel isolation in nanosheet transistors |
Robin Hsin Kuo Chao, Choonghyun Lee, Jingyun Zhang |
2020-10-13 |
$4,674,000 |
| 10763327 |
Nanosheet MOSFET with gate fill utilizing replacement spacer |
Chen Zhang |
2020-09-01 |
$3,521,000 |
| 10756205 |
Double gate two-dimensional material transistor |
Peng Xu, Chen Zhang |
2020-08-25 |
$2,454,000 |
| 10741681 |
Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly |
Chi-Chun Liu, Chen Zhang |
2020-08-11 |
$2,122,000 |
| 10734502 |
Prevention of extension narrowing in nanosheet field effect transistors |
Tenko Yamashita, Chen Zhang |
2020-08-04 |
$3,150,000 |
| 10700195 |
Reduced resistance source and drain extensions in vertical field effect transistors |
Peng Xu, Chen Zhang |
2020-06-30 |
$3,003,000 |
| 10658299 |
Replacement metal gate processes for vertical transport field-effect transistor |
Choonghyun Lee, Ruqiang Bao, Hemanth Jagannathan |
2020-05-19 |
$2,035,000 |
| 10622489 |
Vertical tunnel FET with self-aligned heterojunction |
Choonghyun Lee, Shogo Mochizuki, Ruqiang Bao |
2020-04-14 |
$1,668,000 |
