{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly", "item": "https://www.patentleaderboard.com/patent/10741681"}]}

Home › Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly

Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly

US Patent 10741681 · Granted Aug 11, 2020

Estimated economic value: $2,122,000 ⓘ

Assignee

IBM

Inventors

Chi-Chun Liu (108 patents)
Chun Wing Yeung (73 patents)
Chen Zhang (384 patents)

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