| 12408369 |
Vertical transport field effect transistors having different threshold voltages along the channel |
Takashi Ando, Alexander Reznicek, Jingyun Zhang |
2025-09-02 |
|
| 12408431 |
Gate stack quality for gate-all-around field-effect transistors |
Jingyun Zhang, Takashi Ando |
2025-09-02 |
|
| 12396225 |
Method to release nano sheet after nano sheet fin recess |
Chanro Park, Kangguo Cheng, Ruilong Xie, Juntao Li |
2025-08-19 |
|
| 12255106 |
Multi-Vt nanosheet devices |
Jingyun Zhang, Takashi Ando, Alexander Reznicek |
2025-03-18 |
|
| 12230676 |
Nanosheet device with tri-layer bottom dielectric isolation |
Xin Miao, Jingyun Zhang, Alexander Reznicek |
2025-02-18 |
|
| 12183826 |
Vertical field effect transistor with low-resistance bottom source-drain contact |
Soon-Cheon Seo, Injo Ok, Alexander Reznicek |
2024-12-31 |
$22,533,000 |
| 12156395 |
Metal gate patterning for logic and SRAM in nanosheet devices |
Takashi Ando, Jingyun Zhang, Alexander Reznicek |
2024-11-26 |
$25,600,000 |
| 12136671 |
Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion |
Jingyun Zhang, Takashi Ando, Pouya Hashemi, Alexander Reznicek |
2024-11-05 |
$24,022,000 |
| 12132098 |
Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors |
Shogo Mochizuki, Kangguo Cheng, Juntao Li |
2024-10-29 |
$23,226,000 |
| 12094949 |
Fin-type field effect transistor having a wrap-around gate with bottom isolation and inner spacers to reduce parasitic capacitance |
Chanro Park, Ruilong Xie, Kangguo Cheng |
2024-09-17 |
$9,971,000 |
| 12046466 |
Method and apparatus for treating substrate |
Yong Jun SEO, Hyun YOON, Jungsuk Goh, Byeong Geun Kim, Yoonki SA +6 more |
2024-07-23 |
|
| 12027459 |
Integrated circuit device and method of manufacturing the same |
Joonyong Choe, Youngju Lee |
2024-07-02 |
|
| 12009422 |
Self aligned top contact for vertical transistor |
Christopher J. Waskiewicz, Chanro Park, Alexander Reznicek |
2024-06-11 |
$12,881,000 |
| 12009395 |
Self-aligned block for vertical FETs |
Ruilong Xie, Junli Wang, Alexander Reznicek |
2024-06-11 |
$12,881,000 |
| 11996480 |
Vertical transistor with late source/drain epitaxy |
Kangguo Cheng, Juntao Li, Shogo Mochizuki |
2024-05-28 |
$16,652,000 |
| 11990530 |
Replacement-channel fabrication of III-V nanosheet devices |
Jingyun Zhang, Chun Wing Yeung, Robin Hsin Kuo Chao, Heng Wu |
2024-05-21 |
$15,464,000 |
| 11978783 |
Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance |
Kangguo Cheng, Shogo Mochizuki, Juntao Li |
2024-05-07 |
$15,644,000 |
| 11949011 |
Vertical transistor with gate encapsulation layers |
Chen Zhang |
2024-04-02 |
$9,951,000 |
| 11937521 |
Structure and method to fabricate resistive memory with vertical pre-determined filament |
Chanro Park, Kangguo Cheng, Ruilong Xie |
2024-03-19 |
$12,891,000 |
| 11923438 |
Field-effect transistor with punchthrough stop region |
Kangguo Cheng, Shogo Mochizuki, Juntao Li |
2024-03-05 |
$15,162,000 |
| 11881505 |
Tri-layer STI liner for nanosheet leakage control |
Xin Miao, Alexander Reznicek, Jingyun Zhang |
2024-01-23 |
$16,624,000 |
| 11842998 |
Semiconductor device and method of forming the semiconductor device |
Robin Hsin Kuo Chao, Hemanth Jagannathan, Chun Wing Yeung, Jingyun Zhang |
2023-12-12 |
$10,723,000 |
| 11830877 |
Co-integrated channel and gate formation scheme for nanosheet transistors having separately tuned threshold voltages |
Takashi Ando, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek |
2023-11-28 |
$7,743,000 |
| 11784096 |
Vertical transport field-effect transistors having germanium channel surfaces |
Pouya Hashemi, Takashi Ando |
2023-10-10 |
$6,086,000 |
| 11784122 |
Integrated circuit device and method of manufacturing the same |
Joonyong Choe, Youngju Lee |
2023-10-10 |
|
