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Home › Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion

Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion

US Patent 12136671 · Granted Nov 5, 2024

Estimated economic value: $24,022,000 ⓘ

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