Issued Patents All Time
Showing 25 most recent of 186 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432960 | Wraparound contact with reduced distance to channel | Ruilong Xie, Reinaldo Vega, Yao Yao, Andrew M. Greene, Veeraraghavan S. Basker +2 more | 2025-09-30 |
| 12422465 | In-situ chip design for pulse IV self-heating evaluation | Huimei Zhou, Yoo-Mi Lee, Miaomiao Wang, Huiming Bu | 2025-09-23 |
| 12408431 | Gate stack quality for gate-all-around field-effect transistors | Takashi Ando, Choonghyun Lee | 2025-09-02 |
| 12408369 | Vertical transport field effect transistors having different threshold voltages along the channel | Choonghyun Lee, Takashi Ando, Alexander Reznicek | 2025-09-02 |
| 12349406 | Hybrid gate cut for stacked transistors | Ruilong Xie, Chen Zhang, Carl Radens | 2025-07-01 |
| 12317555 | Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor | Julien Frougier, Sagarika Mukesh, Ruqiang Bao, Andrew M. Greene, Nicolas Loubet +1 more | 2025-05-27 |
| 12255106 | Multi-Vt nanosheet devices | Takashi Ando, Choonghyun Lee, Alexander Reznicek | 2025-03-18 |
| 12230676 | Nanosheet device with tri-layer bottom dielectric isolation | Xin Miao, Alexander Reznicek, Choonghyun Lee | 2025-02-18 |
| D1055961 | Display screen or portion thereof with a graphical user interface | Xiaoxuan Liu, Meilin Li, Cong Ye | 2024-12-31 |
| 12156395 | Metal gate patterning for logic and SRAM in nanosheet devices | Choonghyun Lee, Takashi Ando, Alexander Reznicek | 2024-11-26 |
| 12136671 | Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion | Choonghyun Lee, Takashi Ando, Pouya Hashemi, Alexander Reznicek | 2024-11-05 |
| 12127482 | Multi-state SOT-MRAM structure | Heng Wu, Alexander Reznicek, Bahman Hekmatshoartabari | 2024-10-22 |
| 12119341 | Electrostatic discharge diode having dielectric isolation layer | Huimei Zhou, Julien Frougier, Xuefeng Liu, Lan Yu, Heng Wu +2 more | 2024-10-15 |
| 12108692 | Three terminal phase change memory with self-aligned contacts | Heng Wu, Tian Shen, Kevin W. Brew | 2024-10-01 |
| 12041110 | Bluetooth communication method and related apparatus | Yuhong Zhu, Jiongjin Su, Guanjun Ni | 2024-07-16 |
| 11990530 | Replacement-channel fabrication of III-V nanosheet devices | Choonghyun Lee, Chun Wing Yeung, Robin Hsin Kuo Chao, Heng Wu | 2024-05-21 |
| 11973141 | Nanosheet transistor with ferroelectric region | Reinaldo Vega, Miaomiao Wang, Takashi Ando | 2024-04-30 |
| 11948944 | Optimized contact resistance for stacked FET devices | Ruilong Xie, Heng Wu, Julien Frougier | 2024-04-02 |
| 11908743 | Planar devices with consistent base dielectric | Huimei Zhou, Andrew M. Greene, Julien Frougier, Ruqiang Bao, Miaomiao Wang +1 more | 2024-02-20 |
| 11894444 | Secure chip identification using random threshold voltage variation in a field effect transistor structure as a physically unclonable function | Clint Jason Oteri, Alexander Reznicek, Bahman Hekmatshoartabari, Ruilong Xie | 2024-02-06 |
| 11894442 | Full nanosheet airgap spacer | Ruilong Xie, Reinaldo Vega, Kangguo Cheng, Lan Yu | 2024-02-06 |
| 11894361 | Co-integrated logic, electrostatic discharge, and well contact devices on a substrate | Julien Frougier, Sagarika Mukesh, Anthony I. Chou, Andrew M. Greene, Ruilong Xie +4 more | 2024-02-06 |
| 11881505 | Tri-layer STI liner for nanosheet leakage control | Choonghyun Lee, Xin Miao, Alexander Reznicek | 2024-01-23 |
| 11861810 | Image dehazing method, apparatus, and device, and computer storage medium | Runzeng GUO, Shaoming WANG | 2024-01-02 |
| 11855180 | Gate induced drain leakage reduction in FinFETs | Alexander Reznicek, Takashi Ando, Ruilong Xie | 2023-12-26 |