| 12422465 |
In-situ chip design for pulse IV self-heating evaluation |
Yoo-Mi Lee, Jingyun Zhang, Miaomiao Wang, Huiming Bu |
2025-09-23 |
|
| 12414336 |
Semiconductor structure having stacked power rails |
Ruilong Xie, Julien Frougier, Miaomiao Wang |
2025-09-09 |
|
| 12414312 |
Back-end-of-line thin film resistor |
Baozhen Li, Chih-Chao Yang, Ashim Dutta |
2025-09-09 |
|
| 12414328 |
Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors |
Julien Frougier, Nicolas Loubet, Ruilong Xie, Miaomiao Wang, Veeraraghavan S. Basker |
2025-09-09 |
|
| 12402391 |
Stressed material within gate cut region |
Andrew M. Greene, Michael P. Belyansky, Oleg Gluschenkov, Robert R. Robison, Juntao Li +2 more |
2025-08-26 |
|
| 12356680 |
Nanosheet device with air-gaped source/drain regions |
Yi Song, Kangguo Cheng, Ruilong Xie |
2025-07-08 |
|
| 12300617 |
Self-aligned buried power rail cap for semiconductor devices |
Ruilong Xie, Julien Frougier, Kisik Choi |
2025-05-13 |
|
| 12237325 |
Three-dimensional field effect device |
Su Chen Fan, Shogo Mochizuki, Peng Xu, Nicolas Loubet |
2025-02-25 |
|
| 12119341 |
Electrostatic discharge diode having dielectric isolation layer |
Julien Frougier, Xuefeng Liu, Jingyun Zhang, Lan Yu, Heng Wu +2 more |
2024-10-15 |
$17,235,000 |
| 12107014 |
Nanosheet transistors with self-aligned gate cut |
Julien Frougier, Ruilong Xie, Chanro Park, Kangguo Cheng |
2024-10-01 |
$16,240,000 |
| 12107147 |
Self-aligned gate contact for VTFETs |
Kangguo Cheng, Su Chen Fan, Miaomiao Wang |
2024-10-01 |
$16,240,000 |
| 11955369 |
Recessed local interconnect formed over self-aligned double diffusion break |
Lan Yu, Chen Zhang, Ruilong Xie |
2024-04-09 |
$10,928,000 |
| 11908888 |
Metal-insulator-metal capacitor structure supporting different voltage applications |
Baozhen Li, Chih-Chao Yang, Nan Jing |
2024-02-20 |
$7,691,000 |
| 11908743 |
Planar devices with consistent base dielectric |
Andrew M. Greene, Julien Frougier, Ruqiang Bao, Jingyun Zhang, Miaomiao Wang +1 more |
2024-02-20 |
$7,691,000 |
| 11869812 |
Stacked complementary field effect transistors |
Ruilong Xie, Miaomiao Wang, Alexander Reznicek |
2024-01-09 |
$9,963,000 |
| 11817502 |
Three-dimensional field effect device |
Su Chen Fan, Shogo Mochizuki, Peng Xu, Nicolas Loubet |
2023-11-14 |
$8,271,000 |
| 11804436 |
Self-aligned buried power rail cap for semiconductor devices |
Ruilong Xie, Julien Frougier, Kisik Choi |
2023-10-31 |
$8,788,000 |
| 11789064 |
Decoupling BTI and HCI mechanism in ring oscillator |
Liqiao Qin, Miaomiao Wang, Effendi Leobandung |
2023-10-17 |
$7,011,000 |
| 11694958 |
Layout design for threshold voltage tuning |
Su Chen Fan, Miaomiao Wang, Zuoguang Liu |
2023-07-04 |
|
| 11676892 |
Three-dimensional metal-insulator-metal capacitor embedded in seal structure |
Baozhen Li, Chih-Chao Yang, Nan Jing |
2023-06-13 |
$5,486,000 |
| 11282962 |
Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) |
Ruqiang Bao, Michael P. Belyansky, Andrew M. Greene, Gen Tsutsui |
2022-03-22 |
$5,808,000 |
| 11282186 |
Anomaly detection using image-based physical characterization |
Dechao Guo, Liying Jiang, Derrick Liu, Jingyun Zhang |
2022-03-22 |
$5,808,000 |
| 11222981 |
Three-dimensional field effect device |
Su Chen Fan, Shogo Mochizuki, Peng Xu, Nicolas Loubet |
2022-01-11 |
$4,843,000 |
| 11217680 |
Vertical field-effect transistor with T-shaped gate |
Yi Song, Juntao Li, Kangguo Cheng, Ardasheir Rahman |
2022-01-04 |
$22,913,000 |
| 11183427 |
Differing device characteristics on a single wafer by selective etch |
Shogo Mochizuki, Gen Tsutsui, Ruqiang Bao |
2021-11-23 |
$2,653,000 |
