Issued Patents All Time
Showing 26–46 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11183427 | Differing device characteristics on a single wafer by selective etch | Shogo Mochizuki, Gen Tsutsui, Ruqiang Bao | 2021-11-23 |
| 11094781 | Nanosheet structures having vertically oriented and horizontally stacked nanosheets | Ruilong Xie, Kangguo Cheng, Ardasheir Rahman | 2021-08-17 |
| 10971490 | Three-dimensional field effect device | Su Chen Fan, Shogo Mochizuki, Peng Xu, Nicolas Loubet | 2021-04-06 |
| 10892181 | Semiconductor device with mitigated local layout effects | Gen Tsutsui, Veeraraghavan S. Basker, Andrew M. Greene, Dechao Guo, Huiming Bu +1 more | 2021-01-12 |
| 10832973 | Stress modulation of nFET and pFET fin structures | Kangguo Cheng, Michael P. Belyansky, Oleg Gluschenkov, Richard A. Conti, James J. Kelly +1 more | 2020-11-10 |
| 10741673 | Controlling gate profile by inter-layer dielectric (ILD) nanolaminates | Michael P. Belyansky, Andrew M. Greene, Fee Li Lie | 2020-08-11 |
| 10685866 | Fin isolation to mitigate local layout effects | Gen Tsutsui, Andrew M. Greene, Dechao Guo, Huiming Bu, Robert R. Robison +2 more | 2020-06-16 |
| 10679901 | Differing device characteristics on a single wafer by selective etch | Shogo Mochizuki, Gen Tsutsui, Ruqiang Bao | 2020-06-09 |
| 10672910 | Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) | Ruqiang Bao, Michael P. Belyansky, Andrew M. Greene, Gen Tsutsui | 2020-06-02 |
| 10664966 | Anomaly detection using image-based physical characterization | Dechao Guo, Liying Jiang, Derrick Liu, Jingyun Zhang | 2020-05-26 |
| 10665512 | Stress modulation of nFET and pFET fin structures | Kangguo Cheng, Michael P. Belyansky, Oleg Gluschenkov, Richard A. Conti, James J. Kelly +1 more | 2020-05-26 |
| 10658224 | Method of fin oxidation by flowable oxide fill and steam anneal to mitigate local layout effects | Gen Tsutsui, Veeraraghavan S. Basker, Andrew M. Greene, Dechao Guo, Huiming Bu +1 more | 2020-05-19 |
| 10490667 | Three-dimensional field effect device | Su Chen Fan, Shogo Mochizuki, Peng Xu, Nicolas Loubet | 2019-11-26 |
| 10263098 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Derrick Liu | 2019-04-16 |
| 10249730 | Controlling gate profile by inter-layer dielectric (ILD) nanolaminates | Michael P. Belyansky, Andrew M. Greene, Fee Li Lie | 2019-04-02 |
| 10224419 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Derrick Liu | 2019-03-05 |
| 10170593 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Derrick Liu | 2019-01-01 |
| 10056382 | Modulating transistor performance | Dechao Guo, Juntao Li, Sanjay C. Mehta, Robert R. Robison | 2018-08-21 |
| 9922984 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Derrick Liu | 2018-03-20 |
| 9922983 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Derrick Liu | 2018-03-20 |
| 9721848 | Cutting fins and gates in CMOS devices | Huiming Bu, Kangguo Cheng, Andrew M. Greene, Dechao Guo, Sivananda K. Kanakasabapathy +6 more | 2017-08-01 |