Issued Patents All Time
Showing 25 most recent of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12356680 | Nanosheet device with air-gaped source/drain regions | Huimei Zhou, Kangguo Cheng, Ruilong Xie | 2025-07-08 |
| 12046680 | Inner spacer formation for nanosheet transistors | Chi-Chun Liu, Robin Hsin Kuo Chao, Muthumanickam Sankarapandian | 2024-07-23 |
| 11876136 | Transistor having wrap-around source/drain contacts and under-contact spacers | Praveen Joseph, Andrew M. Greene, Kangguo Cheng | 2024-01-16 |
| 11489044 | Nanosheet transistor bottom isolation | Zhenxing Bi, Kangguo Cheng, Lijuan Zou | 2022-11-01 |
| 11355644 | Vertical field effect transistors with self aligned contacts | Juntao Li, Kangguo Cheng | 2022-06-07 |
| 11296226 | Transistor having wrap-around source/drain contacts and under-contact spacers | Praveen Joseph, Andrew M. Greene, Kangguo Cheng | 2022-04-05 |
| 11217680 | Vertical field-effect transistor with T-shaped gate | Juntao Li, Huimei Zhou, Kangguo Cheng, Ardasheir Rahman | 2022-01-04 |
| 11189532 | Dual width finned semiconductor structure | Jay William Strane, Eric R. Miller, Fee Li Lie, Richard A. Conti | 2021-11-30 |
| 10937860 | Nanosheet transistor bottom isolation | Zhenxing Bi, Kangguo Cheng, Lijuan Zou | 2021-03-02 |
| 10903162 | Fuse element resistance enhancement by laser anneal and ion implantation | Liying Jiang, Juntao Li, Chih-Chao Yang, Michael Rizzolo | 2021-01-26 |
| 10892193 | Controlling active fin height of FinFET device | Veeraraghavan S. Baskar, Jay William Strane, Ekmini Anuja De Silva | 2021-01-12 |
| 10892328 | Source/drain extension regions and air spacers for nanosheet field-effect transistor structures | Zhenxing Bi, Kangguo Cheng, Chi-Chun Liu | 2021-01-12 |
| 10886169 | Airgap formation in BEOL interconnect structure using sidewall image transfer | Kangguo Cheng, Ekmini Anuja De Silva, Juntao Li, Peng Xu | 2021-01-05 |
| 10832907 | Gate-all-around field-effect transistor devices having source/drain extension contacts to channel layers for reduced parasitic resistance | Kangguo Cheng, Zhenxing Bi | 2020-11-10 |
| 10833180 | Self-aligned tunneling field effect transistors | Junli Wang, Chi-Chun Liu, Liying Jiang | 2020-11-10 |
| 10804262 | Cointegration of FET devices with decoupling capacitor | Juntao Li, Kangguo Cheng | 2020-10-13 |
| 10770361 | Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal | Veeraraghavan S. Baskar, Jay William Strane, Ekmini Anuja De Silva | 2020-09-08 |
| 10749011 | Area selective cyclic deposition for VFET top spacer | Zhenxing Bi, Kangguo Cheng, Yongan Xu | 2020-08-18 |
| 10672668 | Dual width finned semiconductor structure | Jay William Strane, Eric R. Miller, Fee Li Lie, Richard A. Conti | 2020-06-02 |
| 10665514 | Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal | Veeraraghavan S. Baskar, Jay William Strane, Ekmini Anuja De Silva | 2020-05-26 |
| 10490447 | Airgap formation in BEOL interconnect structure using sidewall image transfer | Kangguo Cheng, Ekmini Anuja De Silva, Juntao Li, Peng Xu | 2019-11-26 |
| 10461154 | Bottom isolation for nanosheet transistors on bulk substrate | Chi-Chun Liu, Zhenxing Bi, Shogo Mochizuki | 2019-10-29 |
| 10446686 | Asymmetric dual gate fully depleted transistor | Terry Hook, Kangguo Cheng, Chen Zhang, Xin Miao, Peng Xu | 2019-10-15 |
| 10212083 | Openflow data channel and control channel separation | Chidambaram Bhagavathiperumal, Liang Yang | 2019-02-19 |
| 9699063 | Transitioning a routing switch device between network protocols | Jing He, Yuan Li, Liang Yang | 2017-07-04 |