Issued Patents All Time
Showing 51–75 of 401 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11362193 | Inverse T-shaped contact structures having air gap spacers | Kangguo Cheng, Juntao Li, Heng Wu, Peng Xu | 2022-06-14 |
| 11362031 | Integrated circuit device and method of manufacturing the same | Joonyong Choe, Youngju Lee | 2022-06-14 |
| 11355649 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2022-06-07 |
| 11355553 | Resistive random access memory integrated under a vertical field effect transistor | Alexander Reznicek, Bahman Hekmatshoartabari, Tak H. Ning | 2022-06-07 |
| 11342230 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Juntao Li, Heng Wu, Peng Xu | 2022-05-24 |
| 11329143 | Nanosheet transistors with thin inner spacers and tight pitch gate | Kangguo Cheng, Juntao Li, Peng Xu | 2022-05-10 |
| 11322588 | Contact source/drain resistance | Fee Li Lie, Kangguo Cheng, Hemanth Jagannathan, Oleg Gluschenkov | 2022-05-03 |
| 11322408 | Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer | Nicolas Loubet, Richard A. Conti | 2022-05-03 |
| 11316015 | Silicon germanium FinFET with low gate induced drain leakage current | Shogo Mochizuki, Kangguo Cheng, Juntao Li | 2022-04-26 |
| 11302813 | Wrap around contact for nanosheet source drain epitaxy | Alexander Reznicek, Xin Miao, Jingyun Zhang | 2022-04-12 |
| 11302799 | Method and structure for forming a vertical field-effect transistor | Peng Xu, Kangguo Cheng, Juntao Li | 2022-04-12 |
| 11282947 | Heterojunction bipolar transistor with a silicon oxide layer on a silicon germanium base | Injo Ok, Alexander Reznicek, Soon-Cheon Seo | 2022-03-22 |
| 11271106 | Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts | Ruqiang Bao, Brent A. Anderson, Hemanth Jagannathan | 2022-03-08 |
| 11257934 | Fin field-effect transistors with enhanced strain and reduced parasitic capacitance | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2022-02-22 |
| 11257721 | Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages | Ruqiang Bao, Hemanth Jagannathan, Brent A. Anderson | 2022-02-22 |
| 11251285 | Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison | 2022-02-15 |
| 11251094 | Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor | Takashi Ando, Alexander Reznicek, Jingyun Zhang | 2022-02-15 |
| 11245025 | Gate last vertical transport field effect transistor | Soon-Cheon Seo, Injo Ok, Alexander Reznicek | 2022-02-08 |
| 11244870 | Maskless top source/drain epitaxial growth on vertical transport field effect transistor | Shogo Mochizuki, Injo Ok, Soon-Cheon Seo | 2022-02-08 |
| 11239359 | Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer | Jingyun Zhang, Takashi Ando, Pouya Hashemi, Alexander Reznicek | 2022-02-01 |
| 11227937 | Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors | Shogo Mochizuki, Kangguo Cheng, Juntao Li | 2022-01-18 |
| 11217450 | Device with pure silicon oxide layer on silicon-germanium layer | Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Vijay Narayanan | 2022-01-04 |
| 11211379 | Fabrication of field effect transistors with different threshold voltages through modified channel interfaces | Takashi Ando, Ruqiang Bao, Hemanth Jagannathan | 2021-12-28 |
| 11211462 | Using selectively formed cap layers to form self-aligned contacts to source/drain regions | Chanro Park, Kangguo Cheng, Ruilong Xie | 2021-12-28 |
| 11205728 | Vertical field effect transistor with reduced parasitic capacitance | Alexander Reznicek, Xin Miao, Jingyun Zhang | 2021-12-21 |