Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Replacement-channel fabrication of III-V nanosheet devices

Replacement-channel fabrication of III-V nanosheet devices

US Patent 11081567 · Granted Aug 3, 2021

Estimated economic value: $4,187,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dipole threshold voltage tuning for high voltage transistor stacks2025
Wraparound contact with reduced distance to channel2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
In-situ chip design for pulse IV self-heating evaluation2025
Vertical transport field effect transistors having different threshold voltages 2025
Vertical transport field effect transistors having different threshold voltages 2025
Gate stack quality for gate-all-around field-effect transistors2025
Gate stack quality for gate-all-around field-effect transistors2025
Stacked FETS including devices with thick gate oxide2025
Method to release nano sheet after nano sheet fin recess2025
Circuit architecture using transistors with dynamic dual functionality for logic2025
Gate-all-around nanosheet-FET with variable channel geometries for performance o2025