Issued Patents All Time
Showing 51–75 of 180 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10892328 | Source/drain extension regions and air spacers for nanosheet field-effect transistor structures | Yi Song, Kangguo Cheng, Chi-Chun Liu | 2021-01-12 |
| 10886367 | Forming FinFET with reduced variability | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-01-05 |
| 10840354 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Thamarai S. Devarajan, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian | 2020-11-17 |
| 10832907 | Gate-all-around field-effect transistor devices having source/drain extension contacts to channel layers for reduced parasitic resistance | Kangguo Cheng, Yi Song | 2020-11-10 |
| 10833146 | Horizontal-trench capacitor | Zheng Xu, Ruqiang Bao, Dongbing Shao | 2020-11-10 |
| 10804274 | Co-integration of non-volatile memory on gate-all-around field effect transistor | Zheng Xu, Dexin Kong, Kangguo Cheng | 2020-10-13 |
| 10784380 | Gate-all-around transistor based non-volatile memory devices | Zheng Xu, Dexin Kong, Qianwen Chen | 2020-09-22 |
| 10763118 | Cyclic selective deposition for tight pitch patterning | Kangguo Cheng, Juntao Li, Dexin Kong | 2020-09-01 |
| 10749040 | Integration scheme for non-volatile memory on gate-all-around structure | Dexin Kong, Zheng Xu, Kangguo Cheng | 2020-08-18 |
| 10749011 | Area selective cyclic deposition for VFET top spacer | Kangguo Cheng, Yongan Xu, Yi Song | 2020-08-18 |
| 10741456 | Vertically stacked nanosheet CMOS transistor | Kangguo Cheng, Juntao Li | 2020-08-11 |
| 10734281 | Method and structure to fabricate a nanoporous membrane | Kangguo Cheng, Shogo Mochizuki, Hao Tang | 2020-08-04 |
| 10734245 | Highly selective dry etch process for vertical FET STI recess | Muthumanickam Sankarapandian, Richard A. Conti, Michael P. Belyansky | 2020-08-04 |
| 10727352 | Long-channel fin field effect transistors | Kangguo Cheng, Peng Xu, Juntao Li | 2020-07-28 |
| 10714569 | Producing strained nanosheet field effect transistors using a phase change material | Dexin Kong, Kangguo Cheng, Juntao Li | 2020-07-14 |
| 10707127 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Kangguo Cheng, Juntao Li, Dexin Kong | 2020-07-07 |
| 10679992 | Integrated device with vertical field-effect transistors and hybrid channels | Kangguo Cheng, Zheng Xu, Dexin Kong | 2020-06-09 |
| 10669579 | DNA sequencing with stacked nanopores | Kangguo Cheng, Juntao Li, Xin Miao | 2020-06-02 |
| 10658493 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Kangguo Cheng, Nicolas Loubet, Xin Miao, Wenyu Xu, Chen Zhang | 2020-05-19 |
| 10629702 | Approach to bottom dielectric isolation for vertical transport fin field effect transistors | Thamarai S. Devarajan, Balasubramanian Pranatharthiharan, Sanjay C. Mehta, Muthumanickam Sankarapandian | 2020-04-21 |
| 10629589 | Resistor fins | Kangguo Cheng, Juntao Li, Peng Xu | 2020-04-21 |
| 10629495 | Low undercut N-P work function metal patterning in nanosheet replacement metal gate process | Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Romain Lallement, Ruqiang Bao +1 more | 2020-04-21 |
| 10615288 | Integration scheme for non-volatile memory on gate-all-around structure | Dexin Kong, Zheng Xu, Kangguo Cheng | 2020-04-07 |
| 10608121 | FinFET transistor gate and epitaxy formation | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2020-03-31 |
| 10586856 | Nanosheet FET device with epitaxial nucleation | Nicolas Loubet, Julien Frougier, Wenyu Xu | 2020-03-10 |