Issued Patents All Time
Showing 101–125 of 180 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10388651 | Shallow trench isolation recess process flow for vertical field effect transistor fabrication | Kangguo Cheng, Bruce Miao, Xin Miao | 2019-08-20 |
| 10381355 | Dense vertical field effect transistor structure | Peng Xu, Kangguo Cheng, Juntao Li | 2019-08-13 |
| 10381476 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Kangguo Cheng, Juntao Li, Peng Xu | 2019-08-13 |
| 10374034 | Undercut control in isotropic wet etch processes | Chi-Chun Liu, Muthumanickam Sankarapandian, Kristin Schmidt, Ekmini Anuja De Silva, Noel Arellano +2 more | 2019-08-06 |
| 10366928 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2019-07-30 |
| 10361303 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Kangguo Cheng, Juntao Li, Peng Xu | 2019-07-23 |
| 10347731 | Transistor with asymmetric spacers | Kangguo Cheng, Heng Wu, Peng Xu | 2019-07-09 |
| 10332986 | Formation of inner spacer on nanosheet MOSFET | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-25 |
| 10332880 | Vertical fin resistor devices | Kangguo Cheng, Peng Xu | 2019-06-25 |
| 10332799 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-25 |
| 10332802 | Hybrid-channel nano-sheets FETs | Kangguo Cheng, Peng Xu, Wenyu Xu | 2019-06-25 |
| 10325817 | Semiconductor fin patterning techniques to achieve uniform fin profiles for fin field effect transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-18 |
| 10319717 | Forming on-chip metal-insulator-semiconductor capacitor with pillars | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-06-11 |
| 10319813 | Nanosheet CMOS transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-11 |
| 10312237 | Vertical transport transistors with equal gate stack thicknesses | Ruqiang Bao, Choonghyun Lee, Zheng Xu | 2019-06-04 |
| 10283592 | Approach to minimization of strain loss in strained fin field effect transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-05-07 |
| 10276452 | Low undercut N-P work function metal patterning in nanosheet replacement metal gate process | Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Romain Lallement, Ruqiang Bao +1 more | 2019-04-30 |
| 10262861 | Forming a fin cut in a hardmask | Kangguo Cheng, Juntao Li, Peng Xu | 2019-04-16 |
| 10263100 | Buffer regions for blocking unwanted diffusion in nanosheet transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-04-16 |
| 10263075 | Nanosheet CMOS transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-04-16 |
| 10249755 | Transistor with asymmetric source/drain overlap | Kangguo Cheng, Peng Xu, Heng Wu | 2019-04-02 |
| 10242882 | Cyclic etch process to remove dummy gate oxide layer for fin field effect transistor fabrication | Donald F. Canaperi, Thamarai S. Devarajan, Sean Teehan | 2019-03-26 |
| 10236364 | Tunnel transistor | Kangguo Cheng, Peng Xu, Heng Wu | 2019-03-19 |
| 10236346 | Transistor having a high germanium percentage fin channel and a gradient source/drain junction doping profile | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-03-19 |
| 10236290 | Method and structure for improving vertical transistor | Kangguo Cheng, Juntao Li, Peng Xu | 2019-03-19 |