Issued Patents All Time
Showing 126–150 of 180 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10217707 | Trench contact resistance reduction | Kangguo Cheng, Juntao Li, Peng Xu | 2019-02-26 |
| 10217658 | Method and structure for minimizing fin reveal variation in FinFET transistor | Kangguo Cheng, Juntao Li, Hao Tang | 2019-02-26 |
| 10211288 | Vertical transistors with multiple gate lengths | Kangguo Cheng, Peng Xu, Zheng Xu | 2019-02-19 |
| 10170640 | FinFET transistor gate and epitaxy formation | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2019-01-01 |
| 10170331 | Stacked nanowires | Kangguo Cheng, Juntao Li, Xin Miao | 2019-01-01 |
| 10164007 | Transistor with improved air spacer | Kangguo Cheng, Juntao Li, Peng Xu | 2018-12-25 |
| 10163721 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2018-12-25 |
| 10157923 | Vertical transport transistors with equal gate stack thicknesses | Ruqiang Bao, Choonghyun Lee, Zheng Xu | 2018-12-18 |
| 10147651 | Fabrication of fin field effect transistor complementary metal-oxide-semiconductor devices with uniform hybrid channels | Kangguo Cheng, Peng Xu, Jie Yang | 2018-12-04 |
| 10141313 | FinFET with uniform shallow trench isolation recess | Kangguo Cheng, Juntao Li, Peng Xu | 2018-11-27 |
| 10134859 | Transistor with asymmetric spacers | Kangguo Cheng, Heng Wu, Peng Xu | 2018-11-20 |
| 10128122 | Stacked nanowires | Kangguo Cheng, Juntao Li, Xin Miao | 2018-11-13 |
| 10128235 | Asymmetrical vertical transistor | Kangguo Cheng, Juntao Li, Peng Xu | 2018-11-13 |
| 10109722 | Etch-resistant spacer formation on gate structure | Ruilong Xie, Pietro Montanini, Eric R. Miller, Balasubramanian Pranatharthiharan, Oleg Gluschenkov +2 more | 2018-10-23 |
| 10103147 | Vertical transport transistors with equal gate stack thicknesses | Ruqiang Bao, Choonghyun Lee, Zheng Xu | 2018-10-16 |
| 10096695 | Closely packed vertical transistors with reduced contact resistance | Kangguo Cheng, Juntao Li, Peng Xu | 2018-10-09 |
| 10096524 | Semiconductor fin patterning techniques to achieve uniform fin profiles for fin field effect transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2018-10-09 |
| 10079229 | Resistor fins | Kangguo Cheng, Juntao Li, Peng Xu | 2018-09-18 |
| 10043900 | Vertical transport Fin field effect transistors on a substrate with varying effective gate lengths | Kangguo Cheng, Juntao Li, Peng Xu | 2018-08-07 |
| 10032858 | Nanosheet capacitor | Kangguo Cheng, Dongbing Shao, Zheng Xu | 2018-07-24 |
| 10032856 | Nanosheet capacitor | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2018-07-24 |
| 10020221 | Method and structure for minimizing fin reveal variation in FinFET transistor | Kangguo Cheng, Juntao Li, Hao Tang | 2018-07-10 |
| 10020229 | Fin type field effect transistors with different pitches and substantially uniform fin reveal | Kangguo Cheng, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan | 2018-07-10 |
| 10002795 | Method and structure for forming vertical transistors with shared gates and separate gates | Kangguo Cheng, Juntao Li, Peng Xu | 2018-06-19 |
| 10002868 | Vertical fin resistor devices | Kangguo Cheng, Peng Xu | 2018-06-19 |