Issued Patents All Time
Showing 151–175 of 180 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9997352 | Polysilicon residue removal in nanosheet MOSFETs | Donald F. Canaperi, Thamarai S. Devarajan, Nicolas Loubet | 2018-06-12 |
| 9991328 | Tunable on-chip nanosheet resistor | Kangguo Cheng, Wei Wang, Zheng Xu | 2018-06-05 |
| 9991334 | Nanosheet capacitor | Kangguo Cheng, Dongbing Shao, Zheng Xu | 2018-06-05 |
| 9985021 | Shallow trench isolation recess process flow for vertical field effect transistor fabrication | Kangguo Cheng, Bruce Miao, Xin Miao | 2018-05-29 |
| 9984937 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Kangguo Cheng, Juntao Li, Peng Xu | 2018-05-29 |
| 9972542 | Hybrid-channel nano-sheet FETs | Kangguo Cheng, Peng Xu, Wenyu Xu | 2018-05-15 |
| 9954487 | Tuning LC tank circuits | Hung H. Tran, Zheng Xu | 2018-04-24 |
| 9941352 | Transistor with improved air spacer | Kangguo Cheng, Juntao Li, Peng Xu | 2018-04-10 |
| 9941150 | Method and structure for minimizing fin reveal variation in FinFET transistor | Kangguo Cheng, Juntao Li, Hao Tang | 2018-04-10 |
| 9935102 | Method and structure for improving vertical transistor | Kangguo Cheng, Juntao Li, Peng Xu | 2018-04-03 |
| 9935015 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2018-04-03 |
| 9917210 | FinFET transistor gate and epitaxy formation | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2018-03-13 |
| 9899372 | Forming on-chip metal-insulator-semiconductor capacitor | Kangguo Cheng, Peng Xu, Chen Zhang | 2018-02-20 |
| 9865598 | FinFET with uniform shallow trench isolation recess | Kangguo Cheng, Juntao Li, Peng Xu | 2018-01-09 |
| 9859174 | Sidewall image transfer structures | Kangguo Cheng, Juntao Li, Xin Miao | 2018-01-02 |
| 9837403 | Asymmetrical vertical transistor | Kangguo Cheng, Juntao Li, Peng Xu | 2017-12-05 |
| 9837408 | Forming strained and unstrained features on a substrate | Kangguo Cheng, Peng Xu, Zheng Xu | 2017-12-05 |
| 9824934 | Shallow trench isolation recess process flow for vertical field effect transistor fabrication | Kangguo Cheng, Bruce Miao, Xin Miao | 2017-11-21 |
| 9818875 | Approach to minimization of strain loss in strained fin field effect transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2017-11-14 |
| 9799749 | Vertical transport FET devices with uniform bottom spacer | Kangguo Cheng, Juntao Li, Xin Miao | 2017-10-24 |
| 9768104 | Method and structure to fabricate a nanoporous membrane | Kangguo Cheng, Shogo Mochizuki, Hao Tang | 2017-09-19 |
| 9761450 | Forming a fin cut in a hardmask | Kangguo Cheng, Juntao Li, Peng Xu | 2017-09-12 |
| 9754798 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2017-09-05 |
| 9748381 | Pillar formation for heat dissipation and isolation in vertical field effect transistors | Kangguo Cheng, Peng Xu, Chen Zhang | 2017-08-29 |
| 9735253 | Closely packed vertical transistors with reduced contact resistance | Kangguo Cheng, Juntao Li, Peng Xu | 2017-08-15 |