VK

Vimal Kamineni

Globalfoundries: 41 patents #58 of 4,424Top 2%
PS Psiquantum: 11 patents #12 of 57Top 25%
IBM: 9 patents #11,918 of 70,183Top 20%
Lam Research: 3 patents #812 of 2,128Top 40%
GU Globalfoundries U.S.: 1 patents #344 of 665Top 55%
📍 Fremont, CA: #196 of 9,298 inventorsTop 3%
🗺 California: #6,532 of 386,348 inventorsTop 2%
Overall (All Time): #43,913 of 4,157,543Top 2%
56
Patents All Time

Issued Patents All Time

Showing 1–25 of 56 patents

Patent #TitleCo-InventorsDate
12366708 Photonic integrated circuit Matteo Staffaroni, Faraz Najafi, Ann Melnichuk, George Kovall, Yong Liang 2025-07-22
12321053 Engineered electro-optic devices Yong Liang, Mark Thompson, Chia-Ming Chang 2025-06-03
12264961 Superconducting nanowire single photon detector and method of fabrication thereof Chia-Jung Chung, Faraz Najafi, George Kovall, Vitor R. Manfrinato, Mark Thompson +1 more 2025-04-01
12176672 Isolation of waveguide-integrated detectors using a back end of line process Eric Dudley, Yong Liang, Faraz Najafi, Ann Melnichuk 2024-12-24
11892715 Engineered electro-optic devices Yong Liang, Mark Thompson, Chia-Ming Chang 2024-02-06
11817400 Barium titanate films having reduced interfacial strain Yong Liang, Chia-Ming Chang, James Jay McMahon 2023-11-14
11651956 Germanium mediated de-oxidation of silicon Yong Liang 2023-05-16
11441941 Superconducting nanowire single photon detector and method of fabrication thereof Chia-Jung Chung, Faraz Najafi, George Kovall, Vitor R. Manfrinato, Mark Thompson +1 more 2022-09-13
11302528 Germanium mediated de-oxidation of silicon Yong Liang 2022-04-12
11226507 Method and system for formation of stabilized tetragonal barium titanate Yong Liang, Mark Thompson, Chia-Ming Chang 2022-01-18
11024536 Contact interlayer dielectric replacement with improved SAC cap retention Adra Carr, Ruilong Xie, Andrew M. Greene, Nigel G. Cave, Veeraraghavan S. Basker 2021-06-01
11009387 Superconducting nanowire single photon detector and method of fabrication thereof Chia-Jung Chung, Faraz Najafi, George Kovall, Vitor R. Manfrinato, Mark Thompson +1 more 2021-05-18
10950692 Methods of forming air gaps between source/drain contacts and the resulting devices Ruilong Xie, Shesh Mani Pandey, Hui Zang 2021-03-16
10916431 Robust gate cap for protecting a gate from downstream metallization etch operations Raghuveer R. Patlolla, Hari Prasad Amanapu, Sugirtha Krishnamurthy, Viraj Y. Sardesai, Cornelius Brown Peethala 2021-02-09
10916470 Modified dielectric fill between the contacts of field-effect transistors Ruilong Xie, Kangguo Cheng, Adra Carr 2021-02-09
10854515 Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation Ruilong Xie, Mark V. Raymond 2020-12-01
10770562 Interlayer dielectric replacement techniques with protection for source/drain contacts Kangguo Cheng, Juntao Li, Andrew M. Greene, Adra Carr, Chanro Park +1 more 2020-09-08
10741668 Short channel and long channel devices Bala Haran, Ruilong Xie, Balaji Kannan, Katsunori Onishi 2020-08-11
10707132 Method to recess cobalt for gate metal application Georges Jacobi, Randolph F. Knarr, Balasubramanian Pranatharthiharan, Muthumanickam Sankarapandian 2020-07-07
10707119 Interconnect structures with airgaps and dielectric-capped interconnects Nicholas V. LiCausi, Jeremy A. Wahl 2020-07-07
10615078 Method to recess cobalt for gate metal application Georges Jacobi, Randolph F. Knarr, Balasubramanian Pranatharthiharan, Muthumanickam Sankarapandian 2020-04-07
10593593 Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation Ruilong Xie, Mark V. Raymond 2020-03-17
10546785 Method to recess cobalt for gate metal application Georges Jacobi, Randolph F. Knarr, Balasubramanian Pranatharthiharan, Muthumanickam Sankarapandian 2020-01-28
10468300 Contacting source and drain of a transistor device Ruilong Xie, Andre P. Labonte, Lars Liebmann, Daniel Chanemougame, Chanro Park +1 more 2019-11-05
10446443 Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor device Himani Suhag Kamineni, Daniel M. Smith, Maxwell Lippitt 2019-10-15