Issued Patents All Time
Showing 26–50 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10388602 | Local interconnect structure including non-eroded contact via trenches | Su Chen Fan, Andre P. Labonte, Ruilong Xie | 2019-08-20 |
| 10242867 | Gate pickup method using metal selectivity | Guillaume Bouche | 2019-03-26 |
| 10134633 | Self-aligned contact with CMP stop layer | Stan Tsai, Ruilong Xie | 2018-11-20 |
| 10128151 | Devices and methods of cobalt fill metallization | James J. Kelly, Praneet Adusumilli, Oscar van der Straten, Balasubramanian Pranatharthiharan | 2018-11-13 |
| 10043708 | Structure and method for capping cobalt contacts | Viraj Y. Sardesai, Suraj K. Patil, Scott Beasor | 2018-08-07 |
| 10026693 | Method, apparatus, and system for MOL interconnects without titanium liner | Mark V. Raymond, Praneet Adusumilli, Chengyu Niu | 2018-07-17 |
| 10020260 | Corrosion and/or etch protection layer for contacts and interconnect metallization integration | Shafaat Ahmed, Benjamin G. Moser, Dinesh R. Koli, Vishal Chhabra | 2018-07-10 |
| 10014180 | Tungsten gate and method for forming | Neal A. Makela, Pei Liu, Chih-Chiang Chang | 2018-07-03 |
| 9917009 | Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor device | Himani Suhag Kamineni, Daniel M. Smith, Maxwell Lippitt | 2018-03-13 |
| 9905473 | Self-aligned contact etch for fabricating a FinFET | Guillaume Bouche, Michael V. Aquilino | 2018-02-27 |
| 9859217 | Middle of the line (MOL) metal contacts | Chengyu Niu, Mark V. Raymond, Xunyuan Zhang | 2018-01-02 |
| 9721889 | Middle of the line (MOL) metal contacts | Chengyu Niu, Mark V. Raymond, Xunyuan Zhang | 2017-08-01 |
| 9679807 | Method, apparatus, and system for MOL interconnects without titanium liner | Mark V. Raymond, Praneet Adusumilli, Chengyu Niu | 2017-06-13 |
| 9613817 | Method of enhancing surface doping concentration of source/drain regions | Steven Bentley | 2017-04-04 |
| 9570344 | Method to protect MOL metallization from hardmask strip process | Nicholas V. LiCausi, Shariq Siddiqui, Jeremy A. Wahl | 2017-02-14 |
| 9570397 | Local interconnect structure including non-eroded contact via trenches | Su Chen Fan, Andre P. Labonte, Ruilong Xie | 2017-02-14 |
| 9466676 | Method for forming a semiconductor device having a metal gate recess | Ruilong Xie | 2016-10-11 |
| 9362377 | Low line resistivity and repeatable metal recess using CVD cobalt reflow | Hoon Kim, Min Gyu Sung, Chanro Park | 2016-06-07 |
| 9356149 | Silicide protection during contact metallization and resulting semiconductor structures | Ruilong Xie, Robert J. Miller | 2016-05-31 |
| 9330972 | Methods of forming contact structures for semiconductor devices and the resulting devices | Ruilong Xie, William J. Taylor, Jr. | 2016-05-03 |
| 9318388 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Ruilong Xie, Abner Bello, Nicholas V. LiCausi, Wenhui Wang, Michael Wedlake +1 more | 2016-04-19 |
| 9287213 | Integrated circuits with improved contact structures | Xunyuan Zhang, Xuan Lin | 2016-03-15 |
| 9117930 | Methods of forming stressed fin channel structures for FinFET semiconductor devices | Derya Deniz, Abner Bello, Abhijeet Paul, Robert J. Miller, William J. Taylor, Jr. | 2015-08-25 |
| 9111907 | Silicide protection during contact metallization and resulting semiconductor structures | Ruilong Xie, Robert J. Miller | 2015-08-18 |
| 9093302 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Ruilong Xie, Abner Bello, Nicholas V. LiCausi, Wenhui Wang, Michael Wedlake +1 more | 2015-07-28 |