Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10931143 | Rechargeable wafer carrier systems | Stephanie Waite, William J. Fosnight | 2021-02-23 |
| 10818528 | Self-contained metrology wafer carrier systems | Stephanie Waite, William J. Fosnight, Thomas Beeg | 2020-10-27 |
| 10343253 | Methods and systems for chemical mechanical planarization endpoint detection using an alternating current reference signal | Michael Wedlake | 2019-07-09 |
| 10242895 | Self-contained metrology wafer carrier systems | Stephanie Waite, William J. Fosnight, Thomas Beeg | 2019-03-26 |
| 9911634 | Self-contained metrology wafer carrier systems | Stephanie Waite, William J. Fosnight, Thomas Beeg | 2018-03-06 |
| 9419137 | Stress memorization film and oxide isolation in fins | Xiuyu Cai, Hugh Porter, Daniel T. Pham | 2016-08-16 |
| 9318388 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Ruilong Xie, Vimal Kamineni, Nicholas V. LiCausi, Wenhui Wang, Michael Wedlake +1 more | 2016-04-19 |
| 9281249 | Decoupling measurement of layer thicknesses of a plurality of layers of a circuit structure | Alok Vaid, Sipeng Gu, Lokesh Subramany, Xiang Hu, Akshey Sehgal | 2016-03-08 |
| 9117930 | Methods of forming stressed fin channel structures for FinFET semiconductor devices | Vimal Kamineni, Derya Deniz, Abhijeet Paul, Robert J. Miller, William J. Taylor, Jr. | 2015-08-25 |
| 9093302 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Ruilong Xie, Vimal Kamineni, Nicholas V. LiCausi, Wenhui Wang, Michael Wedlake +1 more | 2015-07-28 |
| 8975094 | Test structure and method to facilitate development/optimization of process parameters | Shubhankar Basu | 2015-03-10 |
| 8975142 | FinFET channel stress using tungsten contacts in raised epitaxial source and drain | Abhijeet Paul, Vimal Kamineni, Derya Deniz | 2015-03-10 |
| 8889500 | Methods of forming stressed fin channel structures for FinFET semiconductor devices | Vimal Kamineni, Derya Deniz, Abhijeet Paul, Robert J. Miller, William J. Taylor, Jr. | 2014-11-18 |