Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11101364 | Field-effect transistors with diffusion blocking spacer sections | George R. Mulfinger, Hong Yu, Man Gu, Jianwei Peng | 2021-08-24 |
| 10971625 | Epitaxial structures of a semiconductor device having a wide gate pitch | Daniel Jaeger, Man Gu, Bradley Morgenfeld, Haiting Wang, KAVYA SREE DUGGIMPUDI +1 more | 2021-04-06 |
| 10930549 | Cap structure | Jinsheng Gao, Daniel Jaeger, Chih-Chiang Chang, Patrick Carpenter, Junsic Hong +3 more | 2021-02-23 |
| 10833160 | Field-effect transistors with self-aligned and non-self-aligned contact openings | Daniel Jaeger, Naved Siddiqui, Jessica Dechene, Daniel James Dechene, Shreesh Narasimha +1 more | 2020-11-10 |
| 10644156 | Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices | Jinsheng Gao, Daniel Jaeger, Patrick Carpenter, Xusheng Wu, Haigou Huang | 2020-05-05 |
| 10522639 | Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device | Hui Zang, Daniel Jaeger, Haigou Huang, Veeraraghavan S. Basker, Christopher Nassar +1 more | 2019-12-31 |
| 10460986 | Cap structure | Jinsheng Gao, Daniel Jaeger, Chih-Chiang Chang, Patrick Carpenter, Junsic Hong +3 more | 2019-10-29 |
| 10453751 | Tone inversion method and structure for selective contact via patterning | Xiaofeng Qiu, Patrick Carpenter, Jessica Dechene, Ming Hao Tang, Haigou Huang +1 more | 2019-10-22 |
| 10418455 | Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device | Hui Zang, Daniel Jaeger, Haigou Huang, Veeraraghavan S. Basker, Christopher Nassar +1 more | 2019-09-17 |
| 10340142 | Methods, apparatus and system for self-aligned metal hard masks | Jinsheng Gao, Daniel Jaeger, Patrick Carpenter, Jiehui Shu, Pei Liu +1 more | 2019-07-02 |
| 10325819 | Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device | Jinsheng Gao, Daniel Jaeger, Patrick Carpenter, Jessica Dechene, Huy Cao +2 more | 2019-06-18 |
| 10269654 | Methods, apparatus and system for replacement contact for a finFET device | Jinsheng Gao, Daniel Jaeger, Patrick Carpenter, Jessica Dechene, Huy Cao +2 more | 2019-04-23 |
| 10204797 | Methods, apparatus, and system for reducing step height difference in semiconductor devices | Jinsheng Gao, Daniel Jaeger, Patrick Carpenter, Junsic Hong, Jessica Dechene +1 more | 2019-02-12 |
| 10177154 | Structure and method to prevent EPI short between trenches in FinFET eDRAM | Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz, Byeong Y. Kim +5 more | 2019-01-08 |
| 10049985 | Contact line having insulating spacer therein and method of forming same | Veeraraghavan S. Basker, Keith H. Tabakman, Patrick Carpenter, Guillaume Bouche | 2018-08-14 |
| 9905473 | Self-aligned contact etch for fabricating a FinFET | Guillaume Bouche, Vimal Kamineni | 2018-02-27 |
| 9818741 | Structure and method to prevent EPI short between trenches in FINFET eDRAM | Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz, Byeong Y. Kim +5 more | 2017-11-14 |
| 9812400 | Contact line having insulating spacer therein and method of forming same | Veeraraghavan S. Basker, Keith H. Tabakman, Patrick Carpenter, Guillaume Bouche | 2017-11-07 |
| 9035430 | Semiconductor fin on local oxide | Reinaldo Vega, Daniel Jaeger | 2015-05-19 |
| 8969163 | Forming facet-less epitaxy with self-aligned isolation | Byeong Y. Kim, Ying Li, Carl Radens | 2015-03-03 |
| 8859388 | Sealed shallow trench isolation region | Xiang Hu, Daniel Jaeger, Byeong Y. Kim, Yong Meng Lee, Ying Li +1 more | 2014-10-14 |
| 8853796 | High-K metal gate device | Young Way Teh, Arifuzzaman (Arif) Sheikh, Yun Ling Tan, Hao Zhang, Deleep R. Nair +1 more | 2014-10-07 |
| 8704310 | Trench isolation structure | Reinaldo Vega | 2014-04-22 |
| 8658486 | Forming facet-less epitaxy with a cut mask | Byeong Y. Kim, Ying Li, Carl Radens | 2014-02-25 |
| 8623713 | Trench isolation structure | Reinaldo Vega | 2014-01-07 |