Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12266702 | Flash memory devices with thickened source/drain silicide | Bin Zhu, Madhu Sudan Mukhopadhyay, Subramanian Sundareswara | 2025-04-01 |
| 8853796 | High-K metal gate device | Michael V. Aquilino, Arifuzzaman (Arif) Sheikh, Yun Ling Tan, Hao Zhang, Deleep R. Nair +1 more | 2014-10-07 |
| 8664717 | Semiconductor device with an oversized local contact as a Faraday shield | Yanxiang Liu, Vara Govindeswara Reddy Vakada | 2014-03-04 |
| 8624329 | Spacer-less low-K dielectric processes | Yong Meng Lee, Chung Woh Lai, Wenhe Lin, Khee Yong Lim, Wee Leng Tan +3 more | 2014-01-07 |
| 8563394 | Integrated circuit structure having substantially planar N-P step height and methods of forming | Weipeng Li, Deleep R. Nair, Jae-Eun Park, Voon-Yew Thean | 2013-10-22 |
| 8519445 | Poly profile engineering to modulate spacer induced stress for device enhancement | Vincent Ho, Wenhe Lin, Yong Kong Siew, Bei Chao Zhang, Fan Zhang +2 more | 2013-08-27 |
| 8461009 | Spacer and process to enhance the strain in the channel with stress liner | Atul Ajmera, Christopher V. Baiocco, Xiangdong Chen, Wenzhi Gao | 2013-06-11 |
| 8106462 | Balancing NFET and PFET performance using straining layers | Xiangdong Chen, Weipeng Li, Anda C. Mocuta, Dae-Gyu Park, Melanie J. Sherony +8 more | 2012-01-31 |
| 7999325 | Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS | Yong Meng Lee, Chung Woh Lai, Wenhe Lin, Khee Yong Lim, Wee Leng Tan +3 more | 2011-08-16 |
| 7993997 | Poly profile engineering to modulate spacer induced stress for device enhancement | Vincent Ho, Wenhe Lin, Yong Kong Siew, Bei Chao Zhang, Fan Zhang +2 more | 2011-08-09 |
| 7977185 | Method and apparatus for post silicide spacer removal | Brian J. Greene, Chung Woh Lai, Yong Meng Lee, Wenhe Lin, Siddhartha Panda +1 more | 2011-07-12 |
| 7883953 | Method for transistor fabrication with optimized performance | Da Zhang, Voon-Yew Thean, Christopher V. Baiocco, Jie Chen, Weipeng Li +1 more | 2011-02-08 |
| 7867835 | Integrated circuit system for suppressing short channel effects | Jae Gon Lee, Elgin Quek, Wenzhi Gao | 2011-01-11 |
| 7785950 | Dual stress memory technique method and related structure | Sunfei Fang, Jun Jung Kim, Zhijiong Luo, Hung Y. Ng, Nivo Rovedo | 2010-08-31 |
| 7759206 | Methods of forming semiconductor devices using embedded L-shape spacers | Zhijiong Luo, Atul Ajmera | 2010-07-20 |
| 7615427 | Spacer-less low-k dielectric processes | Yong Meng Lee, Chung Woh Lai, Wenhe Lin, Khee Yong Lim, Wee Leng Tan +3 more | 2009-11-10 |
| 7531401 | Method for improved fabrication of a semiconductor using a stress proximity technique process | Christopher V. Baiocco, Xiangdong Chen, Wenzhi Gao, Young-Gun Ko | 2009-05-12 |
| 7445978 | Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS | Yong Meng Lee, Chung Woh Lai, Wenhe Lin, Khee Yong Lim, Wee Leng Tan +3 more | 2008-11-04 |
| 7307320 | Differential mechanical stress-producing regions for integrated circuit field effect transistors | Min-Chul Sun | 2007-12-11 |
| 7297584 | Methods of fabricating semiconductor devices having a dual stress liner | Jae-eon Park, Ja-Hum Ku, Jun Jung Kim, Dae-Kwon Kang | 2007-11-20 |
| 7256084 | Composite stress spacer | Khee Yong Lim, Wenhe Lin, Chung Woh Lai, Yong Meng Lee, Liang-Choo Hsia +3 more | 2007-08-14 |
| 6815823 | Copper metal structure for the reduction of intra-metal capacitance | Victor Lim, Ting Cheong Ang | 2004-11-09 |
| 6649517 | Copper metal structure for the reduction of intra-metal capacitance | Victor Lim, Ting Cheong Ang | 2003-11-18 |
| 6406975 | Method for fabricating an air gap shallow trench isolation (STI) structure | Victor Lim, Ting Cheong Ang, Alex See, Yong Kong Siew | 2002-06-18 |
| 6380106 | Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures | Seng-Keong Victor Lim, Ting Cheong Ang, Alex See, Yong Kong Siew | 2002-04-30 |