VV

Vara Govindeswara Reddy Vakada

Globalfoundries: 12 patents #298 of 4,424Top 7%
GP Globalfoundries Singapore Pte.: 2 patents #291 of 828Top 40%
📍 Fishkill, NY: #62 of 387 inventorsTop 20%
🗺 New York: #10,487 of 115,490 inventorsTop 10%
Overall (All Time): #347,246 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
10796973 Test structures connected with the lowest metallization levels in an interconnect structure Mankyu Yang, Edward P. Maciejewski, Brian J. Greene, Atsushi Ogino, Vikrant Chauhan +1 more 2020-10-06
10790204 Test structure leveraging the lowest metallization level of an interconnect structure Mankyu Yang, Edward P. Maciejewski, Brian J. Greene, Atsushi Ogino, Vikrant Chauhan +1 more 2020-09-29
10483172 Transistor device structures with retrograde wells in CMOS applications Laegu Kang, Michael Ganz, Yi Qi, Puneet Khanna, Srikanth B. Samavedam +2 more 2019-11-19
9852954 Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures Laegu Kang, Michael Ganz, Yi Qi, Puneet Khanna, Srikanth B. Samavedam +2 more 2017-12-26
9601578 Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS) Jerome Ciavatti, Yanxiang Liu 2017-03-21
9362357 Blanket EPI super steep retrograde well formation without Si recess Laegu Kang, Michael Ganz, Yi Qi, Puneet Khanna, Sri Charan Vemula +1 more 2016-06-07
9209181 Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures Laegu Kang, Michael Ganz, Yi Qi, Puneet Khanna, Srikanth B. Samavedam +2 more 2015-12-08
9099380 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device Laegu Kang, Michael Ganz, Yi Qi, Puneet Khanna, Sri Charan Vemula +1 more 2015-08-04
9099525 Blanket EPI super steep retrograde well formation without Si recess Laegu Kang, Michael Ganz, Yi Qi, Puneet Khanna, Sri Charan Vemula +1 more 2015-08-04
9064868 Advanced faraday shield for a semiconductor device Yanxiang Liu, Jerome Ciavatti 2015-06-23
8916442 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device Laegu Kang, Michael Ganz, Yi Qi, Puneet Khanna, Sri Charan Vemula +1 more 2014-12-23
8669616 Method for forming N-shaped bottom stress liner Xiaodong Yang, Yanxiang Liu, Jinping Liu, Min Dai 2014-03-11
8664717 Semiconductor device with an oversized local contact as a Faraday shield Yanxiang Liu, Young Way Teh 2014-03-04
8557668 Method for forming N-shaped bottom stress liner Xiaodong Yang, Yanxiang Liu, Jinping Liu, Min Dai 2013-10-15