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Transistor device structures with retrograde wells in CMOS applications |
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2019-11-19 |
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Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures |
Vara Govindeswara Reddy Vakada, Michael Ganz, Yi Qi, Puneet Khanna, Srikanth B. Samavedam +2 more |
2017-12-26 |
| 9362357 |
Blanket EPI super steep retrograde well formation without Si recess |
Vara Govindeswara Reddy Vakada, Michael Ganz, Yi Qi, Puneet Khanna, Sri Charan Vemula +1 more |
2016-06-07 |
| 9209181 |
Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures |
Vara Govindeswara Reddy Vakada, Michael Ganz, Yi Qi, Puneet Khanna, Srikanth B. Samavedam +2 more |
2015-12-08 |
| 9099380 |
Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device |
Vara Govindeswara Reddy Vakada, Michael Ganz, Yi Qi, Puneet Khanna, Sri Charan Vemula +1 more |
2015-08-04 |
| 9099525 |
Blanket EPI super steep retrograde well formation without Si recess |
Vara Govindeswara Reddy Vakada, Michael Ganz, Yi Qi, Puneet Khanna, Sri Charan Vemula +1 more |
2015-08-04 |
| 8916442 |
Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device |
Vara Govindeswara Reddy Vakada, Michael Ganz, Yi Qi, Puneet Khanna, Sri Charan Vemula +1 more |
2014-12-23 |
| 8809178 |
Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents |
Yanxiang Liu, Michael Hargrove, Xiaodong Yang, Hans Van Meer, Christian Gruensfelder +1 more |
2014-08-19 |
| 8790972 |
Methods of forming CMOS transistors using tensile stress layers and hydrogen plasma treatment |
Yong-Kuk Jeong, Kim Nam Sung, Dae Won Yang |
2014-07-29 |
| 8445969 |
High pressure deuterium treatment for semiconductor/high-K insulator interface |
Xiangdong Chen, Weipeng Li, Dae-Gyu Park, Melanie J. Sherony |
2013-05-21 |
| 8106462 |
Balancing NFET and PFET performance using straining layers |
Xiangdong Chen, Weipeng Li, Anda C. Mocuta, Dae-Gyu Park, Melanie J. Sherony +8 more |
2012-01-31 |
| 7795089 |
Forming a semiconductor device having epitaxially grown source and drain regions |
Vishal P. Trivedi, Da Zhang |
2010-09-14 |
| 7528078 |
Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer |
Toni D. Van Gompel, Kuang-Hsin Chen, Rode R. Mora, Michael D. Turner |
2009-05-05 |
| 7517742 |
Area diode formation in SOI application |
Byoung W. Min, Michael G. Khazhinsky |
2009-04-14 |
| 7186596 |
Vertical diode formation in SOI application |
Byoung W. Min, Michael G. Khazhinsky |
2007-03-06 |
| 7126172 |
Integration of multiple gate dielectrics by surface protection |
Sangwoo Lim, Geoffrey Yeap |
2006-10-24 |
| 6724048 |
Body-tied silicon on insulator semiconductor device and method therefor |
Byoung W. Min, Michael A. Mendicino |
2004-04-20 |
| 6620656 |
Method of forming body-tied silicon on insulator semiconductor device |
Byoung W. Min, Michael A. Mendicino |
2003-09-16 |
| 5068200 |
Method of manufacturing DRAM cell |
Kyungtae Kim |
1991-11-26 |
