Issued Patents All Time
Showing 25 most recent of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9696027 | Economizer water recirculation system for boiler exit gas temperature control in supercritical pressure boilers | Gary J. Navitsky, Jason J. Wailgum, Bernard H. Walsh | 2017-07-04 |
| 9530864 | Junction overlap control in a semiconductor device using a sacrificial spacer layer | Steven Bentley, Chia-Yu Chen, Ryan O. Jung, Sivanandha K. Kanakasabapathy, Tenko Yamashita | 2016-12-27 |
| 9472554 | Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage | Yanxiang Liu, Christian Gruensfelder | 2016-10-18 |
| 9437740 | Epitaxially forming a set of fins in a semiconductor device | Johannes M. van Meer, Christian Gruensfelder, Yanxiang Liu, Srikanth B. Samavedam | 2016-09-06 |
| 9373721 | Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices | Ajey Poovannummoottil Jacob, Ruilong Xie | 2016-06-21 |
| 9343300 | Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region | Ajey Poovannummoottil Jacob, Jody A. Fronheiser, Murat Kerem Akarvardar | 2016-05-17 |
| 9318342 | Methods of removing fins for finfet semiconductor devices | Ruilong Xie, Andreas Knorr, Ajey Poovannummoottil Jacob | 2016-04-19 |
| 9312387 | Methods of forming FinFET devices with alternative channel materials | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Ruilong Xie | 2016-04-12 |
| 9236258 | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices | Ruilong Xie, Xiuyu Cai, Andy Wei, Qi Zhang, Ajey Poovannummoottil Jacob | 2016-01-12 |
| 9147730 | Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process | Ruilong Xie, Andreas Knorr, Ajey Poovannummoottil Jacob | 2015-09-29 |
| 9142674 | FINFET devices having a body contact and methods of forming the same | Yanxiang Liu, Christian Gruensfelder | 2015-09-22 |
| 9099492 | Methods of forming replacement gate structures with a recessed channel | Kuldeep Amarnath, Srikanth B. Samavedam | 2015-08-04 |
| 9034737 | Epitaxially forming a set of fins in a semiconductor device | Johannes M. van Meer, Christian Gruensfelder, Yanxiang Liu, Srikanth B. Samavedam | 2015-05-19 |
| 8987078 | Metal semiconductor alloy contact with low resistance | Jian-Shen Yu, Jeffrey B. Johnson, Zhengwen Li, Chengwen Pei | 2015-03-24 |
| 8809178 | Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents | Yanxiang Liu, Xiaodong Yang, Hans Van Meer, Laegu Kang, Christian Gruensfelder +1 more | 2014-08-19 |
| 8716828 | Semiconductor device with isolation trench liner | Richard J. Carter, George J. Kluth | 2014-05-06 |
| 8569810 | Metal semiconductor alloy contact with low resistance | Jian-Shen Yu, Jeffrey B. Johnson, Zhengwen Li, Chengwen Pei | 2013-10-29 |
| 8373228 | Semiconductor transistor device structure with back side source/drain contact plugs, and related manufacturing method | Bin Yang, Rohit Pal | 2013-02-12 |
| 8361894 | Methods of forming FinFET semiconductor devices with different fin heights | Kuldeep Amarnath | 2013-01-29 |
| 8294211 | Semiconductor transistor device structure with back side gate contact plugs, and related manufacturing method | Bin Yang, Rohit Pal | 2012-10-23 |
| 8293609 | Method of manufacturing a transistor device having asymmetric embedded strain elements | Rohit Pal, Frank Bin Yang | 2012-10-23 |
| 8217472 | Semiconductor device with isolation trench liner | Richard J. Carter, George J. Kluth | 2012-07-10 |
| 8217463 | Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods | Rohit Pal, Frank Bin Yang | 2012-07-10 |
| 8148750 | Transistor device having asymmetric embedded strain elements and related manufacturing method | Rohit Pal, Frank Bin Yang | 2012-04-03 |
| 8076209 | Methods for fabricating MOS devices having highly stressed channels | Frank Bin Yang, Rohit Pal | 2011-12-13 |