Issued Patents All Time
Showing 1–25 of 76 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10795606 | Buffer-based update of state data | — | 2020-10-06 |
| 10067715 | Buffer-based update of state data | — | 2018-09-04 |
| 9576952 | Integrated circuits with varying gate structures and fabrication methods | Manoj Joshi, Manfred Eller, Srikanth B. Samavedam | 2017-02-21 |
| 9570586 | Fabrication methods facilitating integration of different device architectures | Hong Yu, Seong Yeol Mun, Bingwu Liu, Lun Zhao, Manfred Eller | 2017-02-14 |
| 9508850 | Epitaxial block layer for a fin field effect transistor device | Zhenyu Hu, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child | 2016-11-29 |
| 9455201 | Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits | Manoj Joshi, Manfred Eller, Rohit Pal, Srikanth B. Samavedam, Bongki Lee +1 more | 2016-09-27 |
| 9455198 | Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices | Hong Yu, Hongliang Shen, Zhenyu Hu, Lun Zhao, Xusheng Wu | 2016-09-27 |
| 9362180 | Integrated circuit having multiple threshold voltages | Bongki Lee, Jin Ping Liu, Manoj Joshi, Manfred Eller, Rohit Pal +1 more | 2016-06-07 |
| 9362176 | Uniform exposed raised structures for non-planar semiconductor devices | Hong Yu, Hongliang Shen, Zhao Lun, Zhenyu Hu | 2016-06-07 |
| 9324841 | Methods for preventing oxidation damage during FinFET fabrication | Hong Yu, Hyucksoo Yang, Huang Liu | 2016-04-26 |
| 9293586 | Epitaxial block layer for a fin field effect transistor device | Zhenyu Hu, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child | 2016-03-22 |
| 9236312 | Preventing EPI damage for cap nitride strip scheme in a Fin-shaped field effect transistor (FinFET) device | Hong Yu, Hyucksoo Yang | 2016-01-12 |
| 9219002 | Overlay performance for a fin field effect transistor device | Zhenyu Hu, Andy Wei, Qi Zhang, Hongliang Shen, Daniel T. Pham +1 more | 2015-12-22 |
| 9123568 | Encapsulation of closely spaced gate electrode structures | Peter Baars, Andy Wei | 2015-09-01 |
| 9105478 | Devices and methods of forming fins at tight fin pitches | Andy Wei, Mariappan Hariharaputhiran, Dae Geun Yang, Dae-Han Choi, Xiang Hu +1 more | 2015-08-11 |
| 9093561 | Modified, etch-resistant gate structure(s) facilitating circuit fabrication | Hong Yu, Huang Liu, Lun Zhao | 2015-07-28 |
| 9036395 | Programmed-state detection in memristor stacks | — | 2015-05-19 |
| 8971091 | Method and circuit for switching a memristive device in an array | Wei Yi, Muhammad Shakeel Qureshi, Frederick Perner | 2015-03-03 |
| 8872285 | Metal gate structure for semiconductor devices | Thilo Scheiper, Carsten Grass, Martin Trentzsch | 2014-10-28 |
| 8846513 | Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill | Peter Baars, Rolf Stephan | 2014-09-30 |
| 8835245 | Semiconductor device comprising self-aligned contact elements | Peter Baars, Till Schloesser, Frank Jakubowski, Andy Wei, Matthias Schaller | 2014-09-16 |
| 8742510 | Semiconductor devices with replacement gate structures having conductive contacts positioned therebetween | Peter Baars, Andy Wei | 2014-06-03 |
| 8735240 | CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal | Torben Kelwing, Martin Trentzsch, Boris Bayha, Carsten Grass | 2014-05-27 |
| 8716828 | Semiconductor device with isolation trench liner | George J. Kluth, Michael Hargrove | 2014-05-06 |
| 8681579 | Programmable current-limited voltage buffer, integrated-circuit device and method for current-limiting a memory element | Muhammad Shakeel Qureshi | 2014-03-25 |