Issued Patents All Time
Showing 26–50 of 76 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8664057 | High-K metal gate electrode structures formed by early cap layer adaptation | Rohit Pal, Sven Beyer, Andy Wei | 2014-03-04 |
| 8658543 | Methods for pFET fabrication using APM solutions | Joanna Wasyluk, Stephan Kronholz, Yew Tuck Chow, Berthold Reimer, Kai Tern Sih | 2014-02-25 |
| 8658490 | Passivating point defects in high-K gate dielectric layers during gate stack formation | Elke Erben, Martin Trentzsch | 2014-02-25 |
| 8653605 | Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum | Sven Beyer, Joachim Metzger, Robert Binder | 2014-02-18 |
| 8652889 | Fin-transistor formed on a patterned STI region by late fin etch | Andy Wei, Peter Baars, Frank Ludwig | 2014-02-18 |
| 8647952 | Encapsulation of closely spaced gate electrode structures | Peter Baars, Andy Wei | 2014-02-11 |
| 8611134 | Systems and methods for row-wire voltage-loss compensation in crossbar arrays | — | 2013-12-17 |
| 8525289 | Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization | Martin Trentzsch, Sven Beyer, Rohit Pal | 2013-09-03 |
| 8513080 | Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device | Stephan Kronholz, Berthold Reimes, Fernando Luiz Koch, Gisela Schammler | 2013-08-20 |
| 8486786 | Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process | Stephan Kronholz, Martin Trentzsch | 2013-07-16 |
| 8445344 | Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning | Falk Graetsch, Martin Trentzsch, Sven Beyer, Berthold Reimer, Robert Binder +1 more | 2013-05-21 |
| 8384165 | Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow | Wai Lo, Sey-Shing Sun, Hong Lin, Verne Hornback | 2013-02-26 |
| 8378432 | Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy | Sven Beyer, Martin Trentzsch | 2013-02-19 |
| 8367495 | Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material | Sven Beyer, Markus Lenski, Klaus Hempel | 2013-02-05 |
| 8357978 | Methods of forming semiconductor devices with replacement gate structures | Peter Baars, Andy Wei | 2013-01-22 |
| 8351234 | Extensible three dimensional circuit having parallel array channels | Frederick Perner | 2013-01-08 |
| 8343837 | Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum | Sven Beyer, Joachim Metzger, Robert Binder | 2013-01-01 |
| 8217472 | Semiconductor device with isolation trench liner | George J. Kluth, Michael Hargrove | 2012-07-10 |
| 8198192 | Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization | Martin Trentzsch, Sven Beyer, Rohit Pal | 2012-06-12 |
| 8173501 | Reduced STI topography in high-K metal gate transistors by using a mask after channel semiconductor alloy deposition | Stephan Kronholz, Markus Lenski | 2012-05-08 |
| 8095803 | Protecting the privacy of files referenced by their hash | Mark S. Miller, Alan H. Karp | 2012-01-10 |
| 8048791 | Method of forming a semiconductor device | Michael Hargrove, Ying H. Tsang, George Jonathan Kluth, Kisik Choi | 2011-11-01 |
| 8048748 | Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device | Stephan Kronholz, Berthold Reimer, Fernando Luiz Koch, Gisela Schammler | 2011-11-01 |
| 8023307 | Peripheral signal handling in extensible three dimensional circuits | Frederic C. Amerson | 2011-09-20 |
| 7998832 | Semiconductor device with isolation trench liner, and related fabrication methods | George J. Kluth, Michael Hargrove | 2011-08-16 |