Issued Patents All Time
Showing 25 most recent of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10347543 | FDSOI semiconductor device with contact enhancement layer and method of manufacturing | Peter Baars, Rick Carter, Vikrant Chauhan, Anurag Mittal, David Pritchard +1 more | 2019-07-09 |
| 8048791 | Method of forming a semiconductor device | Michael Hargrove, Richard J. Carter, Ying H. Tsang, Kisik Choi | 2011-11-01 |
| 7504326 | Use of scanning theme implanters and annealers for selective implantation and annealing | Douglas J. Bonser | 2009-03-17 |
| 7176531 | CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric | Qi Xiang, Huicai Zhong, Jung-Suk Goo, Allison Holbrook, Joong S. Jeon | 2007-02-13 |
| 6992370 | Memory cell structure having nitride layer with reduced charge loss and method for fabricating same | Robert Clark-Phelps, Joong S. Jeon, Huicai Zhong, Arvind Halliyal, Mark T. Ramsbey +3 more | 2006-01-31 |
| 6902977 | Method for forming polysilicon gate on high-k dielectric and related structure | Joong S. Jeon, Qi Xiang, Huicai Zhong | 2005-06-07 |
| 6872613 | Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure | Qi Xiang, Huicai Zhong, Jung-Suk Goo, Allison Holbrook, Joong S. Jeon | 2005-03-29 |
| 6841449 | Two-step process for nickel deposition | Jacques Bertrand | 2005-01-11 |
| 6797602 | Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contacts | Qi Xiang | 2004-09-28 |
| 6777275 | Single anneal for dopant activation and silicide formation | — | 2004-08-17 |
| 6730587 | Titanium barrier for nickel silicidation of a gate electrode | Jacques Bertrand, Christy Mei-Chu Woo, Minh Van Ngo | 2004-05-04 |
| 6724051 | Nickel silicide process using non-reactive spacer | Christy Mei-Chu Woo, Minh Van Ngo | 2004-04-20 |
| 6689687 | Two-step process for nickel deposition | Jacques Bertrand | 2004-02-10 |
| 6632740 | Two-step process for nickel deposition | Jacques Bertrand | 2003-10-14 |
| 6627504 | Stacked double sidewall spacer oxide over nitride | Jacques Bertrand | 2003-09-30 |
| 6605513 | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing | Eric N. Paton, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +4 more | 2003-08-12 |
| 6602754 | Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer | Minh Van Ngo, Paul R. Besser | 2003-08-05 |
| 6562717 | Semiconductor device having multiple thickness nickel silicide layers | Christy Mei-Chu Woo, Qi Xiang | 2003-05-13 |
| 6562718 | Process for forming fully silicided gates | Qi Xiang, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +5 more | 2003-05-13 |
| 6555453 | Fully nickel silicided metal gate with shallow junction formed | Qi Xiang, Christy Mei-Chu Woo | 2003-04-29 |
| 6544872 | Dopant implantation processing for improved source/drain interface with metal silicides | Matthew S. Buynoski, Qi Xiang | 2003-04-08 |
| 6541866 | Cobalt barrier for nickel silicidation of a gate electrode | Jacques Bertrand, Christy Mei-Chu Woo, Minh Van Ngo | 2003-04-01 |
| 6521515 | Deeply doped source/drains for reduction of silicide/silicon interface roughness | — | 2003-02-18 |
| 6495460 | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface | Jacques Bertrand, Minh Van Ngo, Christy Mei-Chu Woo | 2002-12-17 |
| 6486062 | Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrate | Matthew S. Buynoski | 2002-11-26 |