| 10347543 |
FDSOI semiconductor device with contact enhancement layer and method of manufacturing |
Peter Baars, Rick Carter, Vikrant Chauhan, Anurag Mittal, David Pritchard +1 more |
2019-07-09 |
$33,274,000 |
| 8048791 |
Method of forming a semiconductor device |
Michael Hargrove, Richard J. Carter, Ying H. Tsang, Kisik Choi |
2011-11-01 |
$1,838,000 |
| 7504326 |
Use of scanning theme implanters and annealers for selective implantation and annealing |
Douglas J. Bonser |
2009-03-17 |
$2,427,000 |
| 7176531 |
CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric |
Qi Xiang, Huicai Zhong, Jung-Suk Goo, Allison Holbrook, Joong S. Jeon |
2007-02-13 |
$17,943,000 |
| 6992370 |
Memory cell structure having nitride layer with reduced charge loss and method for fabricating same |
Robert Clark-Phelps, Joong S. Jeon, Huicai Zhong, Arvind Halliyal, Mark T. Ramsbey +3 more |
2006-01-31 |
$15,487,000 |
| 6902977 |
Method for forming polysilicon gate on high-k dielectric and related structure |
Joong S. Jeon, Qi Xiang, Huicai Zhong |
2005-06-07 |
$8,078,000 |
| 6872613 |
Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure |
Qi Xiang, Huicai Zhong, Jung-Suk Goo, Allison Holbrook, Joong S. Jeon |
2005-03-29 |
$4,814,000 |
| 6841449 |
Two-step process for nickel deposition |
Jacques Bertrand |
2005-01-11 |
$4,696,000 |
| 6797602 |
Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contacts |
Qi Xiang |
2004-09-28 |
$1,915,000 |
| 6777275 |
Single anneal for dopant activation and silicide formation |
— |
2004-08-17 |
$3,269,000 |
| 6730587 |
Titanium barrier for nickel silicidation of a gate electrode |
Jacques Bertrand, Christy Mei-Chu Woo, Minh Van Ngo |
2004-05-04 |
$3,882,000 |
| 6724051 |
Nickel silicide process using non-reactive spacer |
Christy Mei-Chu Woo, Minh Van Ngo |
2004-04-20 |
$2,632,000 |
| 6689687 |
Two-step process for nickel deposition |
Jacques Bertrand |
2004-02-10 |
$3,739,000 |
| 6632740 |
Two-step process for nickel deposition |
Jacques Bertrand |
2003-10-14 |
$7,133,000 |
| 6627504 |
Stacked double sidewall spacer oxide over nitride |
Jacques Bertrand |
2003-09-30 |
$4,535,000 |
| 6605513 |
Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing |
Eric N. Paton, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +4 more |
2003-08-12 |
$3,677,000 |
| 6602754 |
Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer |
Minh Van Ngo, Paul R. Besser |
2003-08-05 |
$3,941,000 |
| 6562717 |
Semiconductor device having multiple thickness nickel silicide layers |
Christy Mei-Chu Woo, Qi Xiang |
2003-05-13 |
$1,759,000 |
| 6562718 |
Process for forming fully silicided gates |
Qi Xiang, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +5 more |
2003-05-13 |
$1,759,000 |
| 6555453 |
Fully nickel silicided metal gate with shallow junction formed |
Qi Xiang, Christy Mei-Chu Woo |
2003-04-29 |
$1,822,000 |
| 6544872 |
Dopant implantation processing for improved source/drain interface with metal silicides |
Matthew S. Buynoski, Qi Xiang |
2003-04-08 |
$2,382,000 |
| 6541866 |
Cobalt barrier for nickel silicidation of a gate electrode |
Jacques Bertrand, Christy Mei-Chu Woo, Minh Van Ngo |
2003-04-01 |
$3,014,000 |
| 6521515 |
Deeply doped source/drains for reduction of silicide/silicon interface roughness |
— |
2003-02-18 |
$2,713,000 |
| 6495460 |
Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface |
Jacques Bertrand, Minh Van Ngo, Christy Mei-Chu Woo |
2002-12-17 |
$3,175,000 |
| 6486062 |
Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrate |
Matthew S. Buynoski |
2002-11-26 |
$2,975,000 |
