| 7943980 |
Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductur applications |
Shenqing Fang, Kuo-Tung Chang, Tim Thurgate, Youseok Suh |
2011-05-17 |
$1,617,000 |
| 7906395 |
Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications |
Shenqing Fang, Kuo-Tung Chang, Tim Thurgate, Youseok Suh |
2011-03-15 |
$1,649,000 |
| 7803680 |
Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications |
Shenging Fang, Kuo-Tung Chang, Tim Thurgate, Youseok Suh |
2010-09-28 |
$1,710,000 |
| 7675104 |
Integrated circuit memory system employing silicon rich layers |
Amol Joshi, Harpreet Sachar, Youseok Suh, Shenqing Fang, Chih-Yuh Yang +6 more |
2010-03-09 |
$42,003,000 |
| 7498222 |
Enhanced etching of a high dielectric constant layer |
John Foster, Scott A. Bell, Simon S. Chan, Phillip Jones |
2009-03-03 |
|
| 7465644 |
Isolation region bird's beak suppression |
Simon S. Chan, Weidong Qian, Scott A. Bell, Phillip Jones |
2008-12-16 |
|
| 7176531 |
CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric |
Qi Xiang, Huicai Zhong, Jung-Suk Goo, Joong S. Jeon, George Jonathan Kluth |
2007-02-13 |
$17,943,000 |
| 6975014 |
Method for making an ultra thin FDSOI device with improved short-channel performance |
Zoran Krivokapic, Sunny Cherian |
2005-12-13 |
$8,414,000 |
| 6872613 |
Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure |
Qi Xiang, Huicai Zhong, Jung-Suk Goo, Joong S. Jeon, George Jonathan Kluth |
2005-03-29 |
$4,814,000 |
| 6821713 |
Method for lateral trimming of spacers |
Jiahua Huang, Sunny Cherian |
2004-11-23 |
$3,336,000 |
| 6709924 |
Fabrication of shallow trench isolation structures with rounded corner and self-aligned gate |
Allen S. Yu, Jeffrey A. Shields |
2004-03-23 |
$3,151,000 |
| 6605843 |
Fully depleted SOI device with tungsten damascene contacts and method of forming same |
Zoran Krivokapic, Sunny Cherian, Kai Yang |
2003-08-12 |
$3,677,000 |
| 6495853 |
Self-aligned gate semiconductor |
Jiahua Huang, Sunny Cherian |
2002-12-17 |
$3,175,000 |
| 6472326 |
Reliable particle removal following a process chamber wet clean |
Greg A. Johnson, Darlene Smith, Omar Serna, Theodros W. Mariam |
2002-10-29 |
$1,498,000 |
| 6448163 |
Method for fabricating T-shaped transistor gate |
Sunny Cherian, Zoran Krivokapic |
2002-09-10 |
$1,244,000 |
| 6383945 |
High selectivity pad etch for thick topside stacks |
Jiahua Huang, Jeffrey A. Shields |
2002-05-07 |
$2,110,000 |
| 6358760 |
Method for amorphous silicon local interconnect etch |
Jiahua Huang, James Chiang, Sunny Cherian |
2002-03-19 |
$4,163,000 |
| 6358362 |
Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process |
William G. En, Fei Wang |
2002-03-19 |
$4,163,000 |
| 6060328 |
Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process |
William G. En, Fei Wang |
2000-05-09 |
$8,913,000 |
| 6013156 |
Bubble monitor for semiconductor manufacturing |
Jiahua Huang, Aaron Fernandes |
2000-01-11 |
$7,165,000 |
| 5920796 |
In-situ etch of BARC layer during formation of local interconnects |
Fei Wang, James Kai |
1999-07-06 |
$3,020,000 |
