| 7023059 |
Trenches to reduce lateral silicide growth in integrated circuit technology |
Darin A. Chan, Simon S. Chan, Jeffrey P. Patton |
2006-04-04 |
$14,413,000 |
| 6841449 |
Two-step process for nickel deposition |
George Jonathan Kluth |
2005-01-11 |
$4,696,000 |
| 6746973 |
Effect of substrate surface treatment on 193 NM resist processing |
Catherine B. Labelle, Ernesto A. Gallardo, Ramkumar Subramanian |
2004-06-08 |
$3,316,000 |
| 6730587 |
Titanium barrier for nickel silicidation of a gate electrode |
Christy Mei-Chu Woo, Minh Van Ngo, George Jonathan Kluth |
2004-05-04 |
$3,882,000 |
| 6689687 |
Two-step process for nickel deposition |
George Jonathan Kluth |
2004-02-10 |
$3,739,000 |
| 6632740 |
Two-step process for nickel deposition |
George Jonathan Kluth |
2003-10-14 |
$7,133,000 |
| 6627504 |
Stacked double sidewall spacer oxide over nitride |
George Jonathan Kluth |
2003-09-30 |
$4,535,000 |
| 6605513 |
Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing |
Eric N. Paton, Ercan Adem, Paul R. Besser, Matthew S. Buynoski, John Foster +4 more |
2003-08-12 |
$3,677,000 |
| 6562718 |
Process for forming fully silicided gates |
Qi Xiang, Ercan Adem, Paul R. Besser, Matthew S. Buynoski, John Foster +5 more |
2003-05-13 |
$1,759,000 |
| 6541866 |
Cobalt barrier for nickel silicidation of a gate electrode |
Christy Mei-Chu Woo, Minh Van Ngo, George Jonathan Kluth |
2003-04-01 |
$3,014,000 |
| 6525391 |
Nickel silicide process using starved silicon diffusion barrier |
Minh Van Ngo |
2003-02-25 |
$1,843,000 |
| 6507123 |
Nickel silicide process using UDOX to prevent silicide shorting |
Christy Mei-Chu Woo, Minh Van Ngo |
2003-01-14 |
$2,234,000 |
| 6495460 |
Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface |
George Jonathan Kluth, Minh Van Ngo, Christy Mei-Chu Woo |
2002-12-17 |
$3,175,000 |
| 6468900 |
Dual layer nickel deposition using a cobalt barrier to reduce surface roughness at silicide/junction interface |
George Jonathan Kluth, Minh Van Ngo, Christy Mei-Chu Woo |
2002-10-22 |
$2,399,000 |
| 6432817 |
Tungsten silicide barrier for nickel silicidation of a gate electrode |
Christy Mei-Chu Woo, Minh Van Ngo, George Jonathan Kluth |
2002-08-13 |
$2,174,000 |
| 6362095 |
Nickel silicide stripping after nickel silicide formation |
Christy Mei-Chu Woo, George Jonathan Kluth |
2002-03-26 |
$3,803,000 |
| 6340395 |
Salsa clean process |
Barry Earl Dick, Shu Tsai Wang, Weiwen Ou, Lynne A. Okada, Yen-Chia Chu |
2002-01-22 |
$12,658,000 |
| 6274504 |
Minimizing metal corrosion during post metal solvent clean |
Anne E. Sanderfer |
2001-08-14 |
$3,163,000 |
| 6235453 |
Low-k photoresist removal process |
Lu You, Steven C. Avanzino, Richard J. Huang |
2001-05-22 |
$9,315,000 |
| 6030901 |
Photoresist stripping without degrading low dielectric constant materials |
Dawn Hopper, Richard J. Huang, Lu You |
2000-02-29 |
$3,732,000 |
