CL

Catherine B. Labelle

Globalfoundries: 15 patents #235 of 4,424Top 6%
IBM: 4 patents #21,733 of 70,183Top 35%
AM AMD: 3 patents #3,141 of 9,279Top 35%
GP Globalfoundries Singapore Pte.: 2 patents #291 of 828Top 40%
GU Globalfoundries U.S.: 1 patents #344 of 665Top 55%
Overall (All Time): #182,663 of 4,157,543Top 5%
23
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11380581 Interconnect structures of semiconductor devices having a via structure through an upper conductive line Andre P. Labonte, Chanro Park 2022-07-05
10199479 Methods of forming a gate cap layer above a replacement gate structure Gunter Grasshoff 2019-02-05
9911619 Fin cut with alternating two color fin hardmask Ruilong Xie, Hoon Kim, Lars Liebmann, Chanro Park, Min Gyu Sung 2018-03-06
9881842 Wimpy and nominal semiconductor device structures for vertical finFETs Kisup Chung, Su Chen Fan, Xin Miao 2018-01-30
9875905 FinFET devices having fins with a tapered configuration and methods of fabricating the same Min Gyu Sung, Ruilong Xie 2018-01-23
9837268 Raised fin structures and methods of fabrication Yi Qi, Xunyuan Zhang 2017-12-05
9779960 Hybrid fin cutting processes for FinFET semiconductor devices Ruilong Xie, Min Gyu Sung 2017-10-03
9761495 Methods of performing concurrent fin and gate cut etch processes for FinFET semiconductor devices and the resulting devices Ruilong Xie, Min Gyu Sung, Chanro Park, Hoon Kim 2017-09-12
9722024 Formation of semiconductor structures employing selective removal of fins Ruilong Xie, Min Gyu Sung 2017-08-01
9548249 Methods of performing fin cut etch processes for FinFET semiconductor devices and the resulting devices Min Gyu Sung 2017-01-17
9431539 Dual-strained nanowire and FinFET devices with dielectric isolation Yi Qi, Xiuyu Cai 2016-08-30
9391140 Raised fin structures and methods of fabrication Yi Qi, Xunyuan Zhang 2016-07-12
9184263 Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices Xiuyu Cai, Ajey Poovannummoottil Jacob, Daniel T. Pham, Mark V. Raymond, Christopher M. Prindle +2 more 2015-11-10
9064848 ARC residue-free etching Xiang Hu, Richard Wise, Habib Hichri 2015-06-23
8932961 Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques Sohan S. Mehta, Tong Qing Chen, Vikrant Chauhan, Ravi Prakash Srivastava, Mark Kelling 2015-01-13
8901006 ARC residue-free etching Xiang Hu, Richard Wise, Habib Hichri 2014-12-02
8525234 Formation of FinFET gate spacer Douglas J. Bonser 2013-09-03
8448103 Manufacturing features of different depth by placement of vias John C. Arnold 2013-05-21
8174055 Formation of FinFET gate spacer Douglas J. Bonser 2012-05-08
7049209 De-fluorination of wafer surface and related structure Timothy J. Dalton, Nicholas Fuller, Kaushik A. Kumar 2006-05-23
6982043 Scatterometry with grating to observe resist removal rate during etch Ramkumar Subramanian, Bharath Rangarajan, Bhanwar Singh, Christopher F. Lyons 2006-01-03
6793765 Situ monitoring of microloading using scatterometry with variable pitch gratings Bhanwar Singh, Bharath Rangarajan 2004-09-21
6746973 Effect of substrate surface treatment on 193 NM resist processing Ernesto A. Gallardo, Ramkumar Subramanian, Jacques Bertrand 2004-06-08