| 10734525 |
Gate-all-around transistor with spacer support and methods of forming same |
Ruilong Xie, Julien Frougier, Nigel G. Cave |
2020-08-04 |
| 10699965 |
Removal of epitaxy defects in transistors |
Andrew M. Greene, Ruilong Xie, Pietro Montanini |
2020-06-30 |
| 10388770 |
Gate and source/drain contact structures positioned above an active region of a transistor device |
Ruilong Xie, Chanro Park |
2019-08-20 |
| 10388747 |
Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structure |
Ruilong Xie, Emilie Bourjot, Laertis Economikos |
2019-08-20 |
| 10290738 |
Methods of forming epi semiconductor material on a recessed fin in the source/drain regions of a FinFET device |
Ruilong Xie, Kwan-Yong Lim |
2019-05-14 |
| 10170544 |
Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region |
Ruilong Xie, Min Gyu Sung, Tek Po Rinus Lee |
2019-01-01 |
| 10068978 |
Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression |
Kwan-Yong Lim |
2018-09-04 |
| 9876077 |
Methods of forming a protection layer on an isolation region of IC products comprising FinFET devices |
Ruilong Xie, Min Gyu Sung, Tek Po Rinus Lee |
2018-01-23 |
| 9806078 |
FinFET spacer formation on gate sidewalls, between the channel and source/drain regions |
Ruilong Xie, Tenko Yamashita, Balasubramanian Pranatharthiharan, Pietro Montanini, Soon-Cheon Seo |
2017-10-31 |
| 9685384 |
Devices and methods of forming epi for aggressive gate pitch |
Ruilong Xie, Soon-Cheon Seo, Balasubramanian Pranatharthiharan, Pietro Montanini, Shogo Mochizuki |
2017-06-20 |
| 9640533 |
Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression |
Kwan-Yong Lim |
2017-05-02 |
| 9496354 |
Semiconductor devices with dummy gate structures partially on isolation regions |
Ruilong Xie, Xiuyu Cai, Ajey Poovannummoottil Jacob, Andreas Knorr |
2016-11-15 |
| 9236452 |
Raised source/drain EPI with suppressed lateral EPI overgrowth |
Kwan-Yong Lim, Jody A. Fronheiser |
2016-01-12 |
| 9230802 |
Transistor(s) with different source/drain channel junction characteristics, and methods of fabrication |
Neeraj Tripathi |
2016-01-05 |
| 9184263 |
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices |
Xiuyu Cai, Ajey Poovannummoottil Jacob, Daniel T. Pham, Mark V. Raymond, Catherine B. Labelle +2 more |
2015-11-10 |
| 9147748 |
Methods of forming replacement spacer structures on semiconductor devices |
Ruilong Xie, Xiuyu Cai, Ajey Poovannummoottil Jacob, Andreas Knorr |
2015-09-29 |
| 8748302 |
Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level |
Johannes Groschopf, Andreas Ott |
2014-06-10 |
| 8735236 |
High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology |
Klaus Hempel, Rolf Stephan |
2014-05-27 |
| 7601641 |
Two step optical planarizing layer etch |
Erik Geiss, Sven Beyer |
2009-10-13 |
| 6924232 |
Semiconductor process and composition for forming a barrier material overlying copper |
Varughese Mathew, Sam S. Garcia |
2005-08-02 |
