| 8871586 |
Methods of reducing material loss in isolation structures by introducing inert atoms into oxide hard mask layer used in growing channel semiconductor material |
Thilo Scheiper, Jan Hoentschel, Markus Lenski |
2014-10-28 |
$3,165,000 |
| 8846513 |
Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill |
Peter Baars, Richard J. Carter |
2014-09-30 |
$1,660,000 |
| 8796807 |
Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials |
Markus Forsberg, Gert Burbach, Anthony Mowry |
2014-08-05 |
$3,132,000 |
| 8735236 |
High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology |
Klaus Hempel, Christopher M. Prindle |
2014-05-27 |
$1,638,000 |
| 8293610 |
Semiconductor device comprising a metal gate stack of reduced height and method of forming the same |
Sven Beyer, Martin Trentzsch, Patrick Press |
2012-10-23 |
$1,510,000 |
| 8288256 |
Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process |
Thomas Feudel, Manfred Horstmann |
2012-10-16 |
$3,691,000 |
| 8158065 |
In situ monitoring of metal contamination during microstructure processing |
Martin Trentzsch, Stephan Kronholz |
2012-04-17 |
$6,725,000 |
| 8119461 |
Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment |
Martin Trentzsch, Thorsten Kammler |
2012-02-21 |
$8,175,000 |
| 8003460 |
Method of forming a semiconductor structure comprising a formation of at least one sidewall spacer structure |
Frank Wirbeleit, Peter Javorka |
2011-08-23 |
$5,509,000 |
| 7745334 |
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques |
Patrick Press, Karla Romero, Martin Trentzsch, Karsten Wieczorek, Thomas Feudel +1 more |
2010-06-29 |
$10,708,000 |
| 7727827 |
Method of forming a semiconductor structure |
Frank Wirbeleit, Manfred Horstmann |
2010-06-01 |
$11,970,000 |
| 7629211 |
Field effect transistor and method of forming a field effect transistor |
Sven Beyer, Thorsten Kammler, Manfred Horstmann |
2009-12-08 |
$23,221,000 |
| 7625802 |
Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device |
Thomas Feudel, Manfred Horstmann |
2009-12-01 |
$20,921,000 |
| 7608499 |
Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the same |
Karla Romero, Sven Beyer, Jan Hoentschel |
2009-10-27 |
$8,132,000 |
| 7605045 |
Field effect transistors and methods for fabricating the same |
Igor Peidous, Patrick Press |
2009-10-20 |
$11,080,000 |
| 7563731 |
Field effect transistor having a stressed dielectric layer based on an enhanced device topography |
Christoph Schwan, Manfred Horstmann, Kai Frohberg |
2009-07-21 |
$9,005,000 |
| 7325224 |
Method and system for increasing product yield by controlling lithography on the basis of electrical speed data |
Rolf Seltmann, Heiko Wagner |
2008-01-29 |
$10,637,000 |
| 7297994 |
Semiconductor device having a retrograde dopant profile in a channel region |
Karsten Wieczorek, Manfred Horstmann |
2007-11-20 |
$5,989,000 |
| 7238578 |
Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions |
Gert Burbach, Karsten Wieczorek, Manfred Horstmann |
2007-07-03 |
$26,803,000 |
| 7226859 |
Method of forming different silicide portions on different silicon-containing regions in a semiconductor device |
Karsten Wieczorek, Manfred Horstmann |
2007-06-05 |
$40,051,000 |
| 7217657 |
Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device |
Karsten Wieczorek, Manfred Horstmann |
2007-05-15 |
$18,237,000 |
| 7148145 |
Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device |
Karsten Wieczorek, Manfred Horstmann |
2006-12-12 |
$19,854,000 |
| 7115464 |
Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device |
Manfred Horstmann, Karsten Wieczorek |
2006-10-03 |
$25,981,000 |
| 7041583 |
Method of removing features using an improved removal process in the fabrication of a semiconductor device |
Karsten Wieczorek, Manfred Horstmann |
2006-05-09 |
$10,311,000 |
| 6924216 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device |
Thomas Feudel, Manfred Horstmann |
2005-08-02 |
$7,108,000 |
