Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9117929 | Method for forming a strained transistor by stress memorization based on a stressed implantation mask | Roman Boschke, Martin Gerhardt | 2015-08-25 |
| 8664056 | Transistor with embedded strain-inducing material formed in diamond-shaped cavities based on a pre-amorphization | Andy Wei | 2014-03-04 |
| 8642420 | Fabrication of a semiconductor device with extended epitaxial semiconductor regions | Stefan Flachowsky, Matthias Kessler, Ricardo P. Mikalo | 2014-02-04 |
| 8536019 | Semiconductor devices having encapsulated isolation regions and related fabrication methods | Ricardo P. Mikalo | 2013-09-17 |
| 8507953 | Body controlled double channel transistor and circuits comprising the same | — | 2013-08-13 |
| 8298924 | Method for differential spacer removal by wet chemical etch process and device with differential spacer structure | Maciej Wiatr, Andy Wei, Andreas Gehring | 2012-10-30 |
| 8264020 | Static RAM cell design and multi-contact regime for connecting double channel transistors | — | 2012-09-11 |
| 8183096 | Static RAM cell design and multi-contact regime for connecting double channel transistors | — | 2012-05-22 |
| 8164145 | Three-dimensional transistor with double channel configuration | — | 2012-04-24 |
| 8138571 | Semiconductor device comprising isolation trenches inducing different types of strain | Christoph Schwan, Joe Bloomquist, Peter Javorka, Manfred Horstmann, Sven Beyer +2 more | 2012-03-20 |
| 8003460 | Method of forming a semiconductor structure comprising a formation of at least one sidewall spacer structure | Rolf Stephan, Peter Javorka | 2011-08-23 |
| 7964458 | Method for forming a strained transistor by stress memorization based on a stressed implantation mask | Roman Boschke, Martin Gerhardt | 2011-06-21 |
| 7906385 | Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography steps | Markus Lenski, Anthony Mowry | 2011-03-15 |
| 7880239 | Body controlled double channel transistor and circuits comprising the same | — | 2011-02-01 |
| 7811876 | Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor device | Casey Scott, Anthony Mowry | 2010-10-12 |
| 7787108 | Inline stress evaluation in microstructure devices | — | 2010-08-31 |
| 7727827 | Method of forming a semiconductor structure | Rolf Stephan, Manfred Horstmann | 2010-06-01 |
| 7696534 | Stressed MOS device | Igor Peidous, Linda Black | 2010-04-13 |
| 7569437 | Formation of transistor having a strained channel region including a performance enhancing material composition utilizing a mask pattern | Andy Wei, Roman Boschke | 2009-08-04 |
| 7547610 | Method of making a semiconductor device comprising isolation trenches inducing different types of strain | Christoph Schwan, Joe Bloomquist, Peter Javorka, Manfred Horstmann, Sven Beyer +2 more | 2009-06-16 |
| 7494906 | Technique for transferring strain into a semiconductor region | Thorsten Kammler, Martin Gerhardt | 2009-02-24 |
| 7442971 | Self-biasing transistor structure and an SRAM cell having less than six transistors | Manfred Horstmann, Christian Hobert | 2008-10-28 |
| 7410859 | Stressed MOS device and method for its fabrication | Igor Peidous, Linda Black | 2008-08-12 |
| 7329599 | Method for fabricating a semiconductor device | Tibor Bolom, Johannes M. van Meer | 2008-02-12 |
| 7329606 | Semiconductor device having nanowire contact structures and method for its fabrication | — | 2008-02-12 |