Issued Patents All Time
Showing 1–25 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11114435 | FinFET having locally higher fin-to-fin pitch | Geert Hellings, Dimitri Linten, Naoto Horiguchi | 2021-09-07 |
| 9659928 | Semiconductor device having a high-K gate dielectric above an STI region | Andy Wei, Markus Forsberg | 2017-05-23 |
| 9515155 | E-fuse design for high-K metal-gate technology | Stefan Flachowsky, Maciej Wiatr, Christian Schippel | 2016-12-06 |
| 9450073 | SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent thereto | Andy Wei, Thorsten Kammler, Casey Scott | 2016-09-20 |
| 9431508 | Simplified gate-first HKMG manufacturing flow | Stefan Flachowsky, Jan Hoentschel | 2016-08-30 |
| 9236440 | Sandwich silicidation for fully silicided gate formation | Stefan Flachowsky, Elke Erben | 2016-01-12 |
| 9117929 | Method for forming a strained transistor by stress memorization based on a stressed implantation mask | Frank Wirbeleit, Martin Gerhardt | 2015-08-25 |
| 9023712 | Method for self-aligned removal of a high-K gate dielectric above an STI region | Andy Wei, Markus Forsberg | 2015-05-05 |
| 9006835 | Transistor with embedded Si/Ge material having reduced offset and superior uniformity | Stephan Kronholz, Peter Javorka | 2015-04-14 |
| 8962420 | Semiconductor device comprising a buried poly resistor | Andreas Kurz, James F. Buller, Andy Wei | 2015-02-24 |
| 8939765 | Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growth | Stephan Kronholz, Peter Javorka, Maciej Wiatr, Christian Krueger | 2015-01-27 |
| 8846467 | Silicidation of semiconductor devices | Stefan Flachowsky, Matthias Kessler | 2014-09-30 |
| 8735241 | Semiconductor device structure and methods for forming a CMOS integrated circuit structure | Stefan Flachowsky, Ralf Richter | 2014-05-27 |
| 8722486 | Enhancing deposition uniformity of a channel semiconductor alloy by forming a recess prior to the well implantation | Stephan Kronholz, Maciej Wiatr, Peter Javorka | 2014-05-13 |
| 8697584 | Enhanced transistor performance of N-channel transistors by using an additional layer above a dual stress liner in a semiconductor device | Ralf Richter, Andy Wei | 2014-04-15 |
| 8664049 | Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material | Stephan Kronholz, Vassilios Papageorgiou, Maciej Wiatr | 2014-03-04 |
| 8652913 | Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss | Andreas Gehring, Maciej Wiatr, Andy Wei, Thorsten Kammler, Casey Scott | 2014-02-18 |
| 8617940 | SOI device with a buried insulating material having increased etch resistivity | Andreas Kurz, Christoph Schwan, John Morgan | 2013-12-31 |
| 8609498 | Transistor with embedded Si/Ge material having reduced offset and superior uniformity | Stephan Kronholz, Peter Javorka | 2013-12-17 |
| 8497180 | Transistor with boot shaped source/drain regions | Peter Javorka, Stephan Kronholz, Matthias Kessler | 2013-07-30 |
| 8481404 | Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge | Thorsten Kammler, Maciej Wiatr, Peter Javorka | 2013-07-09 |
| 8426262 | Stress adjustment in stressed dielectric materials of semiconductor devices by stress relaxation based on radiation | Jan Hoentschel, Uwe Griebenow | 2013-04-23 |
| 8377786 | Methods for fabricating semiconductor devices | Stephan Kronholz, Peter Javorka | 2013-02-19 |
| 8373244 | Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure | Anthony Mowry, Casey Scott | 2013-02-12 |
| 8338892 | Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrode | Stephan Kronholz, Maciej Wiatr, Peter Javorka | 2012-12-25 |