Issued Patents All Time
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9812573 | Semiconductor structure including a transistor having stress creating regions and method for the formation thereof | Arkadiusz Malinowski, Chung Foong Tan, Nicolas Sassiat | 2017-11-07 |
| 9627409 | Semiconductor device with thin-film resistor | Hans-Peter Moll, Andrei Sidelnicov | 2017-04-18 |
| 9515155 | E-fuse design for high-K metal-gate technology | Roman Boschke, Stefan Flachowsky, Christian Schippel | 2016-12-06 |
| 9263582 | Strain engineering in semiconductor devices by using a piezoelectric material | Stephan Kronholz | 2016-02-16 |
| 9153534 | Semiconductor fuse with enhanced post-programming resistance | Andreas Kurz | 2015-10-06 |
| 8939765 | Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growth | Stephan Kronholz, Peter Javorka, Roman Boschke, Christian Krueger | 2015-01-27 |
| 8884379 | Strain engineering in semiconductor devices by using a piezoelectric material | Stephan Kronholz | 2014-11-11 |
| 8836047 | Reducing defect rate during deposition of a channel semiconductor alloy into an in situ recessed active region | Stephan Kronholz, Peter Javorka | 2014-09-16 |
| 8778772 | Method of forming transistor with increased gate width | Chung Foong Tan, Peter Javorka, Falong Zhou | 2014-07-15 |
| 8748275 | Semiconductor devices comprising a channel semiconductor alloy formed with reduced STI topography | Hans-Juergen Thees, Stephan Kronholz | 2014-06-10 |
| 8722481 | Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures | Stephan Kronholz, Peter Javorka | 2014-05-13 |
| 8722486 | Enhancing deposition uniformity of a channel semiconductor alloy by forming a recess prior to the well implantation | Stephan Kronholz, Roman Boschke, Peter Javorka | 2014-05-13 |
| 8709902 | Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structure | Thilo Scheiper, Kerstin Ruttloff, Stefan Flachowsky | 2014-04-29 |
| 8673668 | Test structure for controlling the incorporation of semiconductor alloys in transistors comprising high-k metal gate electrode structures | Stephan Kronholz, Rainer Giedigkeit | 2014-03-18 |
| 8664049 | Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material | Stephan Kronholz, Roman Boschke, Vassilios Papageorgiou | 2014-03-04 |
| 8652913 | Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss | Andreas Gehring, Andy Wei, Thorsten Kammler, Roman Boschke, Casey Scott | 2014-02-18 |
| 8574991 | Asymmetric transistor devices formed by asymmetric spacers and tilted implantation | Jan Hoentschel, Uwe Griebenow | 2013-11-05 |
| 8536009 | Differential threshold voltage adjustment in PMOS transistors by differential formation of a channel semiconductor material | Peter Javorka, Stephan Kronholz | 2013-09-17 |
| 8524567 | Semiconductor fuse with enhanced post-programming resistance | Andreas Kurz | 2013-09-03 |
| 8481381 | Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures | Stephan Kronholz, Peter Javorka | 2013-07-09 |
| 8481404 | Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge | Thorsten Kammler, Roman Boschke, Peter Javorka | 2013-07-09 |
| 8460980 | Transistor comprising an embedded semiconductor alloy in drain and source regions extending under the gate electrode | Stephan Kronholz, Matthias Kessler | 2013-06-11 |
| 8456224 | Compensation of operating time-related degradation of operating speed by a constant total die power mode | Richard Heller, Rolf Geilenkeuser | 2013-06-04 |
| 8343826 | Method for forming a transistor comprising high-k metal gate electrode structures including a polycrystalline semiconductor material and embedded strain-inducing semiconductor alloys | Stephan Kronholz, Peter Javorka | 2013-01-01 |
| 8338892 | Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrode | Stephan Kronholz, Roman Boschke, Peter Javorka | 2012-12-25 |