CS

Casey Scott

Globalfoundries: 7 patents #504 of 4,424Top 15%
AM AMD: 6 patents #1,863 of 9,279Top 25%
Overall (All Time): #382,964 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9450073 SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent thereto Andy Wei, Thorsten Kammler, Roman Boschke 2016-09-20
8652913 Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss Andreas Gehring, Maciej Wiatr, Andy Wei, Thorsten Kammler, Roman Boschke 2014-02-18
8530894 Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions Anthony Mowry, Vassilios Papageorgiou, Andy Wei, Markus Lenski, Andreas Gehring 2013-09-10
8373244 Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure Anthony Mowry, Roman Boschke 2013-02-12
8334569 Transistor with embedded Si/Ge material having enhanced across-substrate uniformity Robert Neil Mulfinger, Andy Wei, Jan Hoentschel 2012-12-18
8227266 Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions Anthony Mowry, Vassilios Papageorgiou, Andy Wei, Markus Lenski, Andreas Gehring 2012-07-24
8212184 Cold temperature control in a semiconductor device Anthony Mowry, Maciej Wiatr, Ralf Richter 2012-07-03
8183100 Transistor with embedded SI/GE material having enhanced across-substrate uniformity Robert Neil Mulfinger, Andy Wei, Jan Hoentschel 2012-05-22
8138050 Transistor device comprising an asymmetric embedded semiconductor alloy Vassilios Papageorgiou, Jan Hoentschel, Robert Neil Mulfinger 2012-03-20
8093634 In situ formed drain and source regions in a silicon/germanium containing transistor device Anthony Mowry, Andy Wei, Andreas Gehring 2012-01-10
7897451 Method for creating tensile strain by selectively applying stress memorization techniques to NMOS transistors Maciej Wiatr, Andreas Gehring, Peter Javorka, Andy Wei 2011-03-01
7811876 Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor device Anthony Mowry, Frank Wirbeleit 2010-10-12
7713763 Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions Anthony Mowry, Vassilios Papageorgiou, Andy Wei, Markus Lenski, Andreas Gehring 2010-05-11