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SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent thereto |
Andy Wei, Thorsten Kammler, Roman Boschke |
2016-09-20 |
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Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss |
Andreas Gehring, Maciej Wiatr, Andy Wei, Thorsten Kammler, Roman Boschke |
2014-02-18 |
| 8530894 |
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions |
Anthony Mowry, Vassilios Papageorgiou, Andy Wei, Markus Lenski, Andreas Gehring |
2013-09-10 |
| 8373244 |
Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure |
Anthony Mowry, Roman Boschke |
2013-02-12 |
| 8334569 |
Transistor with embedded Si/Ge material having enhanced across-substrate uniformity |
Robert Neil Mulfinger, Andy Wei, Jan Hoentschel |
2012-12-18 |
| 8227266 |
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions |
Anthony Mowry, Vassilios Papageorgiou, Andy Wei, Markus Lenski, Andreas Gehring |
2012-07-24 |
| 8212184 |
Cold temperature control in a semiconductor device |
Anthony Mowry, Maciej Wiatr, Ralf Richter |
2012-07-03 |
| 8183100 |
Transistor with embedded SI/GE material having enhanced across-substrate uniformity |
Robert Neil Mulfinger, Andy Wei, Jan Hoentschel |
2012-05-22 |
| 8138050 |
Transistor device comprising an asymmetric embedded semiconductor alloy |
Vassilios Papageorgiou, Jan Hoentschel, Robert Neil Mulfinger |
2012-03-20 |
| 8093634 |
In situ formed drain and source regions in a silicon/germanium containing transistor device |
Anthony Mowry, Andy Wei, Andreas Gehring |
2012-01-10 |
| 7897451 |
Method for creating tensile strain by selectively applying stress memorization techniques to NMOS transistors |
Maciej Wiatr, Andreas Gehring, Peter Javorka, Andy Wei |
2011-03-01 |
| 7811876 |
Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor device |
Anthony Mowry, Frank Wirbeleit |
2010-10-12 |
| 7713763 |
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions |
Anthony Mowry, Vassilios Papageorgiou, Andy Wei, Markus Lenski, Andreas Gehring |
2010-05-11 |