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Transistor devices with high-k insulation layers |
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2016-08-23 |
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2016-03-15 |
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Technique for manufacturing semiconductor devices comprising transistors with different threshold voltages |
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Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof |
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Methods of forming transistor devices with high-k insulation layers and the resulting devices |
Martin Gerhardt, Stefan Flachowsky |
2015-09-15 |
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Motor vehicle control system with simplified information exchange |
— |
2015-05-05 |
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Ionization method, ion producing device and uses of the same in ion mobility spectrometry |
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Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof |
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2015-02-24 |
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Silicidation of semiconductor devices |
Roman Boschke, Stefan Flachowsky |
2014-09-30 |
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Fabrication of a semiconductor device with extended epitaxial semiconductor regions |
Stefan Flachowsky, Frank Wirbeleit, Ricardo P. Mikalo |
2014-02-04 |
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Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices |
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2014-01-07 |
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2013-07-30 |
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2013-06-11 |
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Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacer |
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2012-09-04 |