Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408417 | Forksheet semiconductor structure including at least one bipolar junction transistor and method | Alexander M. Derrickson | 2025-09-02 |
| 11916136 | Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base | Alexander M. Derrickson, Judson R. Holt | 2024-02-27 |
| 11804542 | Annular bipolar transistors | Alexander M. Derrickson, Jagar Singh, Mankyu Yang, Judson R. Holt | 2023-10-31 |
| 11646361 | Electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor fin | Alexander M. Derrickson, Haiting Wang | 2023-05-09 |
| 11462632 | Lateral bipolar junction transistor device and method of making such a device | Alexander M. Derrickson, Ali Razavieh, Halting Wang | 2022-10-04 |
| 11424349 | Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices | Alexander M. Derrickson, Judson R. Holt | 2022-08-23 |
| 11362177 | Epitaxial semiconductor material regions for transistor devices and methods of forming same | Baofu Zhu, Frank W. Mont, Ali Razavieh, Julien Frougier | 2022-06-14 |
| 11239315 | Dual trench isolation structures | Shiv Kumar Mishra, Baofu Zhu, Kaushikee Mishra | 2022-02-01 |
| 11205699 | Epitaxial semiconductor material regions for transistor devices and methods of forming same | Baofu Zhu, Frank W. Mont, Julien Frougier, Ali Razavieh | 2021-12-21 |
| 11094822 | Source/drain regions for transistor devices and methods of forming same | Baofu Zhu, Judson R. Holt, Shiv Kumar Mishra | 2021-08-17 |
| 10546943 | Methods, apparatus, and system for reducing leakage current in semiconductor devices | Jagar Singh | 2020-01-28 |
| 9812573 | Semiconductor structure including a transistor having stress creating regions and method for the formation thereof | Chung Foong Tan, Nicolas Sassiat, Maciej Wiatr | 2017-11-07 |