RB

Roman Boschke

Globalfoundries: 27 patents #97 of 4,424Top 3%
AM AMD: 6 patents #1,863 of 9,279Top 25%
IV Imec Vzw: 1 patents #463 of 1,046Top 45%
KL Katholieke Universiteit Leuven: 1 patents #233 of 754Top 35%
📍 Dresden, DE: #34 of 3,254 inventorsTop 2%
Overall (All Time): #102,891 of 4,157,543Top 3%
34
Patents All Time

Issued Patents All Time

Showing 26–34 of 34 patents

Patent #TitleCo-InventorsDate
8334573 Buried etch stop layer in trench isolation structures for superior surface planarity in densely packed semiconductor devices Maciej Wiatr, Markus Forsberg, Stephan Kronholz 2012-12-18
8268679 Semiconductor device comprising eFUSES of enhanced programming efficiency Oliver Aubel, Jens Poppe, Andreas Kurz 2012-09-18
8193066 Semiconductor device comprising a silicon/germanium resistor Andreas Kurz, Christoph Schwan, John Morgan 2012-06-05
8097519 SOI device having a substrate diode formed by reduced implantation energy Maciej Wiatr, Markus Forsberg 2012-01-17
7964458 Method for forming a strained transistor by stress memorization based on a stressed implantation mask Frank Wirbeleit, Martin Gerhardt 2011-06-21
7923338 Increasing stress transfer efficiency in a transistor by reducing spacer width during the drain/source implantation sequence Maciej Wiatr, Anthony Mowry 2011-04-12
7879667 Blocking pre-amorphization of a gate electrode of a transistor Anthony Mowry, Markus Lenski, Andy Wei 2011-02-01
7763515 Transistor with embedded silicon/germanium material on a strained semiconductor on insulator substrate Andy Wei, Thorsten Kammler, Manfred Horstmann 2010-07-27
7569437 Formation of transistor having a strained channel region including a performance enhancing material composition utilizing a mask pattern Frank Wirbeleit, Andy Wei 2009-08-04