| 9659928 |
Semiconductor device having a high-K gate dielectric above an STI region |
Andy Wei, Roman Boschke |
2017-05-23 |
| 9023712 |
Method for self-aligned removal of a high-K gate dielectric above an STI region |
Andy Wei, Roman Boschke |
2015-05-05 |
| 8796807 |
Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials |
Rolf Stephan, Gert Burbach, Anthony Mowry |
2014-08-05 |
| 8334573 |
Buried etch stop layer in trench isolation structures for superior surface planarity in densely packed semiconductor devices |
Maciej Wiatr, Stephan Kronholz, Roman Boschke |
2012-12-18 |
| 8138571 |
Semiconductor device comprising isolation trenches inducing different types of strain |
Christoph Schwan, Joe Bloomquist, Peter Javorka, Manfred Horstmann, Sven Beyer +2 more |
2012-03-20 |
| 8101512 |
Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topography |
Martin Gerhardt, Martin Trentzsch, Manfred Horstmann |
2012-01-24 |
| 8097519 |
SOI device having a substrate diode formed by reduced implantation energy |
Maciej Wiatr, Roman Boschke |
2012-01-17 |
| 7547610 |
Method of making a semiconductor device comprising isolation trenches inducing different types of strain |
Christoph Schwan, Joe Bloomquist, Peter Javorka, Manfred Horstmann, Sven Beyer +2 more |
2009-06-16 |
