| 8791509 |
Multiple gate transistor having homogenously silicided fin end portions |
Sven Beyer, Rainer Giedigkeit, Jan Hoentschel |
2014-07-29 |
| 8357575 |
Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers |
Klaus Hempel, Vivien Schroeder, Berthold Reimer, Johannes Groschopf |
2013-01-22 |
| 8293610 |
Semiconductor device comprising a metal gate stack of reduced height and method of forming the same |
Sven Beyer, Rolf Stephan, Martin Trentzsch |
2012-10-23 |
| 8247281 |
Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers |
Klaus Hempel, Vivien Schroeder, Berthold Reimer, Johannes Groschopf |
2012-08-21 |
| 8188871 |
Drive current adjustment for transistors by local gate engineering |
Manfred Horstmann, Karsten Wieczorek, Kerstin Ruttloff |
2012-05-29 |
| 8039335 |
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain |
Sven Beyer, Manfred Horstmann, Wolfgang Buchholtz |
2011-10-18 |
| 7893503 |
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain |
Sven Beyer, Manfred Horstmann, Wolfgang Buchholtz |
2011-02-22 |
| 7833874 |
Technique for forming an isolation trench as a stress source for strain engineering |
Kai Frohberg, Thomas Werner |
2010-11-16 |
| 7799682 |
Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor |
Sven Beyer, Thomas Feudel |
2010-09-21 |
| 7754554 |
Methods for fabricating low contact resistance CMOS circuits |
Igor Peidous, Paul R. Besser |
2010-07-13 |
| 7745334 |
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques |
Karla Romero, Martin Trentzsch, Karsten Wieczorek, Thomas Feudel, Markus Lenski +1 more |
2010-06-29 |
| 7741167 |
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain |
Sven Beyer, Manfred Horstmann, Wolfgang Buchholtz |
2010-06-22 |
| 7605045 |
Field effect transistors and methods for fabricating the same |
Igor Peidous, Rolf Stephan |
2009-10-20 |
| 7384877 |
Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation |
Volker Kahlert, Christof Streck |
2008-06-10 |
| 6548378 |
Method of boron doping wafers using a vertical oven system |
Henning Boness |
2003-04-15 |
