Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Drive current adjustment for transistors by local gate engineering

Drive current adjustment for transistors by local gate engineering

US Patent 8188871 · Granted May 29, 2012

Estimated economic value: $10,485,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Variable-speed drive for single-phase asynchronous motors2025
Multi-step deposition of a spacer material for reducing void formation in a diel2015
Multiple gate transistor having homogenously silicided fin end portions2014
Oxide deposition by using a double liner approach for reducing pattern density d2014
Sacrificial spacer approach for differential source/drain implantation spacers i2014
Method of forming a field effect transistor2013
Threshold adjustment for MOS devices by adapting a spacer width prior to implant2013
SOI semiconductor device comprising substrate diodes having a topography toleran2013
Technique for exposing a placeholder material in a replacement gate approach by 2013
Contacts and vias of a semiconductor device formed by a hard mask and double exp2012
Semiconductor device comprising a metal gate stack of reduced height and method 2012
Enhancing transistor characteristics by a late deep implantation in combination 2012