VK

Volker Kahlert

AM AMD: 18 patents #607 of 9,279Top 7%
Globalfoundries: 7 patents #504 of 4,424Top 15%
Overall (All Time): #164,950 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8432035 Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices Christof Streck 2013-04-30
8384217 Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride Christof Streck 2013-02-26
8222135 Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride Christof Streck 2012-07-17
8211795 Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment Joerg Hohage, Hartmut Ruelke, Ulrich Mayer 2012-07-03
8124532 Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer Christof Streck, Alexander Hanke 2012-02-28
8105943 Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques Christof Streck, John A. Iacoponi 2012-01-31
8084354 Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices Christof Streck 2011-12-27
7867917 Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity Joerg Hohage, Matthias Lehr 2011-01-11
7829460 Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride Christof Streck 2010-11-09
7687398 Technique for forming nickel silicide by depositing nickel from a gaseous precursor Christof Streck, Alexander Hanke 2010-03-30
7678699 Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction Joerg Hohage, Matthias Lehr 2010-03-16
7638428 Semiconductor structure and method of forming the same Christof Streck 2009-12-29
7595269 Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer Christof Streck, Alexander Hanke 2009-09-29
7544551 Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radius Christof Streck, Alexander Hanke 2009-06-09
7491638 Method of forming an insulating capping layer for a copper metallization layer Joerg Hohage, Matthias Lehr 2009-02-17
7476626 Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity Joerg Hohage, Matthias Lehr 2009-01-13
7442638 Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layer Kai Frohberg, Katja Huy 2008-10-28
7413985 Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure device Christof Streck 2008-08-19
7384877 Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation Christof Streck, Patrick Press 2008-06-10
7071096 Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition Michael Friedemann 2006-07-04
7063091 Method for cleaning the surface of a substrate Frank Koschinsky, Peter Huebler 2006-06-20
6984294 Method of forming a conductive barrier layer having improved coverage within critical openings Michael Friedemann 2006-01-10
6841468 Method of forming a conductive barrier layer having improve adhesion and resistivity characteristics Michael Friedemann 2005-01-11
6716650 Interface void monitoring in a damascene process Eckhard Langer, Frank Koschinsky, Peter Hübler 2004-04-06
6613660 Metallization process sequence for a barrier metal layer Frank Koschinsky, Peter Hübler 2003-09-02