| 8847205 |
Spacer for a gate electrode having tensile stress and a method of forming the same |
Hartmut Ruelke, Markus Lenski |
2014-09-30 |
| 8557667 |
Spacer for a gate electrode having tensile stress and a method of forming the same |
Hartmut Rülke, Markus Lenski |
2013-10-15 |
| 8084088 |
Method of improving the wafer-to-wafer thickness uniformity of silicon nitride layers |
Hartmut Ruelke, Michael D. Turner |
2011-12-27 |
| 7807233 |
Method of forming a TEOS cap layer at low temperature and reduced deposition rate |
Hartmut Ruelke, Karla Romero |
2010-10-05 |
| 7442638 |
Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layer |
Kai Frohberg, Volker Kahlert |
2008-10-28 |
| 7326646 |
Nitrogen-free ARC layer and a method of manufacturing the same |
Hartmut Ruelke, Sven Muehle |
2008-02-05 |
| 7109086 |
Technique for forming a spacer for a line element by using an etch stop layer deposited by a highly directional deposition technique |
Thorsten Kammler, Markus Lenski |
2006-09-19 |
| 7005358 |
Technique for forming recessed sidewall spacers for a polysilicon line |
Thorsten Kammler, Christoph Schwan |
2006-02-28 |
