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Semiconductor device comprising isolation trenches inducing different types of strain |
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Tensile strain source using silicon/germanium in globally strained silicon |
Andy Wei, Manfred Horstmann |
2011-08-16 |
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Method of forming a TEOS cap layer at low temperature and reduced deposition rate |
Hartmut Ruelke, Katja Huy |
2010-10-05 |
| 7745334 |
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques |
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2010-06-29 |
| 7719060 |
Tensile strain source using silicon/germanium in globally strained silicon |
Andy Wei, Manfred Horstmann |
2010-05-18 |
| 7608499 |
Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the same |
Sven Beyer, Jan Hoentschel, Rolf Stephan |
2009-10-27 |
| 7547610 |
Method of making a semiconductor device comprising isolation trenches inducing different types of strain |
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2009-06-16 |
| 7279389 |
Technique for forming a transistor having raised drain and source regions with a tri-layer hard mask for gate patterning |
Thorsten Kammler, Scott Luning, Hans Van Meer |
2007-10-09 |
